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IconosTítuloAutorAño del DocumentoFormato Mimetype
Atomistic-study-structural-electronic.pdf.jpgAtomistic study of the structural and electronic properties of a-Si:H/c-Si interfacesSantos Tejido, Iván; Cazzaniga, Marco; Onida, Giovanni; Colombo, Luciano2014application/pdf
Modeling-experimental-characterization-stepped.pdf.jpgModeling and experimental characterization of stepped and v-shaped {311} defects in siliconMarqués Cuesta, Luis Alberto; Aboy Cebrián, María; Dudeck, Karleen J.; Botton, Gianluigi A.; Knights, Andrew P.; Gwilliam, Russell M.2014application/pdf
Modeling-defects-dopant.pdf.jpgModeling of defects, dopant diffusion and clustering in siliconAboy Cebrián, María; Santos Tejido, Iván; Pelaz Montes, María Lourdes; Marqués Cuesta, Luis Alberto; López Martín, Pedro2014application/pdf
Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealingFisicaro, Giuseppe; Pelaz Montes, María Lourdes; Aboy Cebrián, María; López Martín, Pedro; Italia, Markus; Huet, Karim; Cristiano, Filadelfo; Essa, Zahi; Yang, Qui; Bedel-Pereira, Elena; Quillec, Maurice; La Magna, Antonino2014application/pdf
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