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Por favor, use este identificador para citar o enlazar este ítem: http://uvadoc.uva.es/handle/10324/28012
Título: Improved physical models for advanced silicon device processing
Autor: Pelaz Montes, María Lourdes
Marqués Cuesta, Luis Alberto
Aboy Cebrián, María
López Martín, Pedro
Santos Tejido, Iván
Año del Documento: 2017
Editorial: Elsevier
Descripción: Producción Científica
Documento Fuente: Materials Science in Semiconductor Processing Volume 62, 2017, Pages 62-79
Resumen: We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.
Palabras Clave: Silicon
Ion implantation
Silicio
Implantación de iones
Revisión por Pares: SI
DOI: https://doi.org/10.1016/j.mssp.2016.11.007
Patrocinador: Ministerio de Ciencia e Innovación - FEDER (Proyect TEC2014-60694-P)
Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA331U14)
Version del Editor: http://www.sciencedirect.com/science/article/pii/S1369800116305066
Idioma: eng
URI: http://uvadoc.uva.es/handle/10324/28012
Derechos: info:eu-repo/semantics/openAccess
Aparece en las colecciones:DEP22 - Artículos de revista

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