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Por favor, use este identificador para citar o enlazar este ítem: http://uvadoc.uva.es/handle/10324/31324
Título: Electromagnetic Field Enhancement on Axially Heterostructured NWs: The Role of the Heterojunctions
Autor: Pura, José Luis
Souto, Jorge
Periwal, P.
Baron, T.
Jiménez López, Juan
Año del Documento: 2018
Editorial: The Minerals, Metals & Materials Society
Documento Fuente: Journal of ELECTRONIC MATERIALS, Vol. 47, No. 9, 2018
Resumen: Semiconductor nanowires are the building blocks of future nanoelectronic devices. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. We carried out experimental measurements through the micro-Raman spectroscopy of different group IV nanowires, both homogeneous Si nanowires and axially heterostructured SiGe/Si nanowires. These experimental measurements show an enhancement of the Raman signal in the vicinity of the heterojunction of SiGe/Si nanowires. The results are analysed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances, and the results are understood as a consequence of a finite change in the relative permittivity of the material at the SiGe/Si heterojunction. This effect opens a path to controlling interactions between light and matter at the nanoscale with direct applications in photonic nanodevices.
Palabras Clave: Nanowires, silicon, light-matter interaction, light enhancement, heterojunctions
Patrocinador: Junta de Castilla y Leo´n (Projects VA293U13, and VA081U16), and Spanish Government (CICYT MAT2010-20441-C02 (01 and 02)). J. L. Pura was granted by the FPU programme (Spanish Government FPU14/00916).
Version del Editor: https://link.springer.com/article/10.1007/s11664-018-6356-9
Idioma: eng
URI: http://uvadoc.uva.es/handle/10324/31324
Derechos: info:eu-repo/semantics/openAccess
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