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Electromagnetic Field Enhancement on Axially Heterostructured NWs: The Role of the Heterojunctions
Año del Documento
The Minerals, Metals & Materials Society
Journal of ELECTRONIC MATERIALS, Vol. 47, No. 9, 2018
Semiconductor nanowires are the building blocks of future nanoelectronic devices. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. We carried out experimental measurements through the micro-Raman spectroscopy of different group IV nanowires, both homogeneous Si nanowires and axially heterostructured SiGe/Si nanowires. These experimental measurements show an enhancement of the Raman signal in the vicinity of the heterojunction of SiGe/Si nanowires. The results are analysed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances, and the results are understood as a consequence of a finite change in the relative permittivity of the material at the SiGe/Si heterojunction. This effect opens a path to controlling interactions between light and matter at the nanoscale with direct applications in photonic nanodevices.
Nanowires, silicon, light-matter interaction, light enhancement, heterojunctions
Junta de Castilla y Leo´n (Projects VA293U13, and VA081U16), and Spanish Government (CICYT MAT2010-20441-C02 (01 and 02)). J. L. Pura was granted by the FPU programme (Spanish Government FPU14/00916).
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