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Por favor, use este identificador para citar o enlazar este ítem: http://uvadoc.uva.es/handle/10324/31960
Título: Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study
Autor: Santos Tejido, Iván
Marqués Cuesta, Luis Alberto
Pelaz Montes, María Lourdes
López Martín, Pedro
Aboy Cebrián, María
Año del Documento: 2012
Editorial: AIP Publishing
Descripción: Producción Científica
Documento Fuente: AIP Conference Proceedings, 2012, Volume 1496, 229
Resumen: We have studied the temperature effect on the damage generation mechanisms in silicon, suppressing the influence of dynamic annealing. We have done dedicated classical molecular dynamics simulations to determine how the ballistic mechanism and the thermal spikes are affected by temperature. We have quantified the minimum energy required to permanently displace an atom from its lattice position by a ballistic collision. We have found that the displacement energy threshold does not change appreciably with temperature. However, when subthreshold energy is simultaneously deposited in several neighboring particles in a finite volume, i.e. when thermal spikes occur, there is an enhancement of the generation of damage with increasing temperature. In high energy recoils both mechanisms are combined, and it results in an increase of the generated damage with temperature.
Palabras Clave: Implantación de iones
Silicio
Dinámica molecular
Silicon
Ion implantation
Molecular dynamics
ISSN: 0094-243X
Revisión por Pares: SI
DOI: https://doi.org/10.1063/1.4766530
Patrocinador: Ministerio de Ciencia e Innovación (Proyect TEC2011-27701)
Version del Editor: https://aip.scitation.org/doi/10.1063/1.4766530
Idioma: eng
URI: http://uvadoc.uva.es/handle/10324/31960
Derechos: info:eu-repo/semantics/openAccess
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