2024-03-28T14:13:17Zhttp://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/319622021-06-24T07:18:33Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1270col_10324_28026
The curious case of thin-body Ge crystallization
Duffy, Ray
Shayesteh, M.
McCarthy, B.
Blake, A.
White, M.
Scully, J.
Yu, R.
Kelleher, A. M.
Schmidt, M.
Petkov, N.
Pelaz Montes, María Lourdes
Marqués Cuesta, Luis Alberto
Cristalización
Crystallization
Producción Científica
The authors investigate the templated crystallization of thin-body Ge fin structures with high aspect ratios. Experimental variables include fin thickness and thermal treatments, with fin structures oriented in the 〈110〉 direction. Transmission electron microscopy determined that various crystal defects form during crystallization of amorphous Ge regions, most notably {111} stacking faults, twin boundaries, and small crystallites. In all cases, the nature of the defects is dependent on the fin thickness and thermal treatments applied. Using a standard 600 °C rapid-thermal-anneal, Gestructures with high aspect ratios crystallize with better crystal quality and fewer uncured defects than the equivalent Si case, which is a cause for optimism for thin-film Ge devices.
Science Foundation Ireland under Research Grant Nos. 09/SIRG/I1623 and 09/SIRG/I1621.
2018-10-02T08:41:56Z
2018-10-02T08:41:56Z
2011
info:eu-repo/semantics/article
Applied Physics Letters, 2011, 99, 131901
0003-6951
http://uvadoc.uva.es/handle/10324/31962
https://doi.org/10.1063/1.3643160
eng
https://aip.scitation.org/doi/10.1063/1.3643160
Attribution-NonCommercial-NoDerivatives 4.0 International
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
© 2011 American Institute of Physics
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AIP Publishing
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Hispana
TEXT
http://creativecommons.org/licenses/by-nc-nd/4.0/
UVaDOC. Repositorio Documental de la Universidad de Valladolid
http://uvadoc.uva.es/handle/10324/31962