2024-03-28T16:27:51Zhttp://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/319622021-06-24T07:18:33Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1270col_10324_28026
00925njm 22002777a 4500
dc
Duffy, Ray
author
Shayesteh, M.
author
McCarthy, B.
author
Blake, A.
author
White, M.
author
Scully, J.
author
Yu, R.
author
Kelleher, A. M.
author
Schmidt, M.
author
Petkov, N.
author
Pelaz Montes, María Lourdes
author
Marqués Cuesta, Luis Alberto
author
2011
The authors investigate the templated crystallization of thin-body Ge fin structures with high aspect ratios. Experimental variables include fin thickness and thermal treatments, with fin structures oriented in the 〈110〉 direction. Transmission electron microscopy determined that various crystal defects form during crystallization of amorphous Ge regions, most notably {111} stacking faults, twin boundaries, and small crystallites. In all cases, the nature of the defects is dependent on the fin thickness and thermal treatments applied. Using a standard 600 °C rapid-thermal-anneal, Gestructures with high aspect ratios crystallize with better crystal quality and fewer uncured defects than the equivalent Si case, which is a cause for optimism for thin-film Ge devices.
Applied Physics Letters, 2011, 99, 131901
0003-6951
http://uvadoc.uva.es/handle/10324/31962
https://doi.org/10.1063/1.3643160
The curious case of thin-body Ge crystallization