2024-03-29T14:44:27Zhttp://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/286222021-06-22T07:28:25Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1270col_10324_28026
Fisicaro, Giuseppe
Pelaz Montes, María Lourdes
Aboy Cebrián, María
López Martín, Pedro
Italia, Markus
Huet, Karim
Cristiano, Filadelfo
Essa, Zahi
Yang, Qui
Bedel Pereira, Elena
Quillec, Maurice
La Magna, Antonino
2018-02-20T12:34:57Z
2018-02-20T12:34:57Z
2014
Applied Physics Express, 2014, Volume 7, Number 2
1882-0778
http://uvadoc.uva.es/handle/10324/28622
http://dx.doi.org/10.7567/APEX.7.021301
We investigate the correlation between dopant activation and damage evolution in boron-implanted silicon under excimer laser irradiation. The dopant activation efficiency in the solid phase was measured under a wide range of irradiation conditions and simulated using coupled phase-field and kinetic Monte Carlo models. With the inclusion of dopant atoms, the presented code extends the capabilities of a previous version, allowing its definitive validation by means of detailed comparisons with experimental data. The stochastic method predicts the post-implant kinetics of the defect-dopant system in the far-from-equilibrium conditions caused by laser irradiation. The simulations explain the dopant activation dynamics and demonstrate that the competitive dopant-defect kinetics during the first laser annealing treatment dominates the activation phenomenon, stabilizing the system against additional laser irradiation steps.
eng
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
Attribution-NonCommercial-NoDerivatives 4.0 International
Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
info:eu-repo/semantics/article