2024-03-29T02:24:36Zhttp://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/323782021-06-23T10:17:49Zcom_10324_1158com_10324_931com_10324_894col_10324_1242
Tejero Riosecas, Alejandro
Tupin, E.
González Rebollo, Miguel Ángel
Martínez Sacristán, Óscar
Jiménez López, Juan Ignacio
Belouet, C.
Baillis, C.
2018-10-30T08:35:55Z
2018-10-30T08:35:55Z
2014
Acta Physica Polonica A 2014; 125, pp. 1006-1009
1898-794X
http://uvadoc.uva.es/handle/10324/32378
https://doi.org/10.12693/APhysPolA.125.1006
In the silicon ribbon on a sacrificial template process silicon is deposited on both sides of a carbon ribbon, thus forming a Si/carbon/Si trilayer. The fast cooling of the ribbon in large temperature gradients generates stresses that are detrimental to both the electrical performance and the mechanical behaviour of the wafers. The assessment of the stresses is crucial for the setting-up of thermal treatments allowing for the stress relaxation of the wafers, prior to the cell fabrication. We present an analysis of the stress in the as-grown trilayer by a simulation of the thermomechanical behaviour of the cooling ribbon. Experimental measurements of the stress in as-grown and annealed trilayers are also presented. The results permit to establish the conditions for optimized growth and annealing.
eng
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
Attribution-NonCommercial-NoDerivatives 4.0 International
Raman Study of Multicrystalline Silicon Wafers Produced by the RST Process
info:eu-repo/semantics/article