2024-03-28T16:09:49Zhttp://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/352072021-06-23T10:22:09Zcom_10324_1158com_10324_931com_10324_894col_10324_1244
Navarro, A.
Martínez Sacristán, Óscar
Galiana, B.
Lombardero, I.
Ochoa, M.
García, I.
Gabás, M.
Ballesteros, Carmen
Jiménez López, Juan Ignacio
Algora, C.
2019-03-22T19:38:13Z
2019-03-22T19:38:13Z
2017
17th International Conference DRIP: Defects-Recognition, Imaging and Physics in Semiconductors, 8th to the 12th of October 2017, Valladolid, Spain
http://uvadoc.uva.es/handle/10324/35207
The development of a high quality 1eV material is one of the most import challenges in high efficiency solar cells development. The GaInP/GaInAs/1eV/Ge structure attained one of the highest solar cell efficiency, 44.0%. The dilute nitride GaNSbAs has attracted a considerable interest, since this alloy can be grown lattice-matched to GaAs with a bandgap of 1eV. However, It is well-known that N incorporation in dilute nitrides is associated with the generation of structural defects and as a result, the degradation of the optical properties. Thermal annealing is the most common procedure to improve the dilute nitrides response. In order to have a deeper understanding of the GaNSbAs layer behaviour, the effects of ex-situ annealing in N-atmosphere and in-situ annealing in As-atmosphere, have been investigated. Samples have been analysed for the first time by cathodoluminescence (CL), being this technique a good method for getting direct information in a simple, fast and non-destructive way about compositional gradients. It has been supported by scanning transmission electron microscopy (STEM) and energy dispersive spectroscopy (EDS).
eng
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
Attribution-NonCommercial-NoDerivatives 4.0 International
Cathodoluminescence characterization of the band gap energy in dilute nitride GaNSbAs alloys [Poster]
info:eu-repo/semantics/conferenceObject