2024-03-28T18:48:36Zhttp://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/229972021-06-23T10:20:31Zcom_10324_1158com_10324_931com_10324_894col_10324_1243
Daza, Raquel
Gázquez, Fernando
Miller, Ana Zelia
Sáiz Jiménez, Cesáreo
Calaforra, José María
Forti, Paolo
Rull Pérez, Fernando
Medina García, Jesús
Sanz Arranz, Aurelio
Martínez Frías, Jesús
Toulkeridis, Theofilos
2017-04-05T11:21:35Z
2017-04-05T11:21:35Z
2016
17th International Vulcanspeleology Symposium
http://uvadoc.uva.es/handle/10324/22997
Different types of hard and soft speleothems
(stalactites, stalagmites, columns, crusts, flowstones,
micro-gours and botryoidal coralloids) have been
observed throughout lava tubes in the Galapagos
archipelago, Ecuador. Three lava tubes were studied in
this work: Gallardo and Royal Palm volcanic caves
(Santa Cruz Island) and Sucre Cave (Isabela Island).
The studied speleothems were mainly formed by opal,
calcite and clay minerals, including plagioclase and
pyroxenes from the basaltic host rock. Rarely, iron
oxides, gypsum were found in some speleothems,
which were interpreted as alteration products of the
primary volcanic materials. Field emission scanning
electron microscopy revealed abundant filamentous
17th International Vulcanspeleology Symposium 2
bacteria, and reticulated filaments similar to those
recently observed in others lava tubes around the world.
These filaments are associated with EPS and mineral
deposits rich in Si, Ca or Fe. The identified minerals
and the evidence of biosignatures suggest a biological
contribution to speleothem development within
Gallardo, Royal Palm and Sucre lava tubes.
application/pdf
eng
info:eu-repo/semantics/openAccess
Insights into speleothems from lava tubes of the Galapagos Islands (Ecuador): mineralogy and biogenecity
info:eu-repo/semantics/bookPart
oai:uvadoc.uva.es:10324/313212021-06-23T10:20:37Zcom_10324_1158com_10324_931com_10324_894col_10324_1243
Sánchez, L.A.
Moretón Fernández, Ángel
Guada, Miguel
Rodríguez Conde, Sofía
Martínez Sacristán, Óscar
González Rebollo, Miguel Ángel
Jiménez López, Juan Ignacio
2018-08-31T07:49:55Z
2018-08-31T07:49:55Z
2018
Journal of Electronic Materials, 2018, Volume 47, Issue 9, pp 5077–5082
0361-5235
http://uvadoc.uva.es/handle/10324/31321
https://doi.org/10.1007/s11664-018-6381-8
Today’s photovoltaic market is dominated by multicrystalline silicon (mc-Si) based solar cells with around 70% of worldwide production. In order to improve the quality of the Si material, a proper characterization of the electrical activity in mc-Si solar cells is essential. A full-wafer characterization technique such as photoluminescence imaging (PLi) provides a fast inspection of the wafer defects, though at the expense of the spatial resolution. On the other
hand, a study of the defects at a microscopic scale can be achieved through the light-beam induced current technique. The combination of these macroscopic and microscopic resolution techniques allows a detailed study of the electrical activity of defects in mc-Si solar cells. In this work, upgraded metallurgical grade Si solar cells are studied using these two techniques.
Ministerio de Economía, Industria y Competitividad (ENE2014-56069-C4-4-R)
Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. Project VA081U16)
application/pdf
eng
Springer
Topical Collection: 17th Conference on Defects (DRIP XVII)
https://link.springer.com/article/10.1007/s11664-018-6381-8
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
Attribution-NonCommercial-NoDerivatives 4.0 International
Solar cells multicrystalline silicon
UMG silicon
LBIC
Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells
info:eu-repo/semantics/bookPart
oai:uvadoc.uva.es:10324/313242021-06-23T10:20:33Zcom_10324_1158com_10324_931com_10324_894col_10324_1243
Pura Ruiz, José Luis
Souto Bartolomé, Jorge Manuel
Periwal, Priyanka
Baron, Thierry
Jiménez López, Juan Ignacio
2018-08-31T08:13:28Z
2018-08-31T08:13:28Z
2018
Journal of ELECTRONIC MATERIALS, Vol. 47, No. 9, 2018
http://uvadoc.uva.es/handle/10324/31324
TOPICAL COLLECTION: 17TH CONFERENCE ON DEFECTS (DRIP XVII)
Semiconductor nanowires are the building blocks of future nanoelectronic devices. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. We carried out experimental measurements through the micro-Raman spectroscopy of different group IV nanowires, both homogeneous Si nanowires and axially heterostructured SiGe/Si nanowires. These experimental measurements show an enhancement of the Raman signal in the vicinity of the heterojunction of SiGe/Si nanowires. The results are analysed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances, and the results are understood as a consequence of a finite change in the relative permittivity of the material at
the SiGe/Si heterojunction. This effect opens a path to controlling interactions between light and matter at the nanoscale with direct applications in photonic nanodevices.
Junta de Castilla y Leo´n (Projects VA293U13, and VA081U16), and Spanish Government (CICYT MAT2010-20441-C02 (01 and 02)). J. L. Pura was granted by the FPU programme (Spanish Government FPU14/00916).
application/pdf
eng
The Minerals, Metals & Materials Society
info:eu-repo/semantics/openAccess
Nanowires, silicon, light-matter interaction, light enhancement, heterojunctions
Electromagnetic Field Enhancement on Axially Heterostructured NWs: The Role of the Heterojunctions
info:eu-repo/semantics/bookPart
https://link.springer.com/article/10.1007/s11664-018-6356-9
oai:uvadoc.uva.es:10324/313262021-06-23T10:20:34Zcom_10324_1158com_10324_931com_10324_894col_10324_1243
Navarro, A.
Martínez Sacristán, Óscar
Galiana, B.
Lombardero, I.
Ochoa, M.
García, I.
Gabás, M.
Ballesteros, Carmen
Jiménez López, Juan Ignacio
Algora, C.
2018-08-31T08:30:04Z
2018-08-31T08:30:04Z
2018
Journal of Electronic Materials, 2018, Volume 47, Issue 9, pp 5061–5067
http://uvadoc.uva.es/handle/10324/31326
https://doi.org/10.1007/s11664-018-6325-3
The effects of ex situ annealing in N ambient and in situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and distribution of Sb was measured by energy dispersive spectroscopy (EDS). The cross-sectional CL analysis of all samples reveals a shift of the near band edge (NBE) emission along the growth axis, presumably associated with a non-uniform incorporation of Sb during the growth process,
in agreement with the Sb distribution measured by EDS in the as-grown sample. The NBE emission in the annealed samples presents a redshift with respect to the as-grown sample. This effect might be explained by a redistribution/activation of N in the GaNSbAs lattice since the Sb distribution measured by EDS does not reveal significant changes, within the error margin, with respect to the as-grown sample. The in situ annealed in the As overpressure
sample shows the best properties for solar cells applications, i.e., a NBE peak position close to 1.0 eV and the lowest full width at half maximum of this emission.
Spanish Government (MINECO Project ENE2014- 56069-C4-4-R) and Junta de Castilla y Leo´n (VA293U13 and VA081U16 Projects). The Ministry of Economy and Competitiveness MINECO supports this work through Projects TEC2014-54260- C3-1-P, TEC2014-54260-C3-2-P, TEC2014-54260- C3-3-P, PCIN-2015-181-C02-01 and PCIN-2015- 181-C02-02.
application/pdf
eng
Springer
Topical Collection: 17th Conference on Defects (DRIP XVII)
https://link.springer.com/article/10.1007/s11664-018-6325-3
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
Attribution-NonCommercial-NoDerivatives 4.0 International
Dilute nitrides, GaNSbAs, solar cells, cathodoluminescence, annealing
Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys
info:eu-repo/semantics/bookPart
oai:uvadoc.uva.es:10324/313332021-06-23T10:20:36Zcom_10324_1158com_10324_931com_10324_894col_10324_1243
Sánchez, L.A.
Moretón Fernández, Ángel
Guada, Miguel
Rodríguez Conde, Sofía
Martínez Sacristán, Óscar
Jiménez López, Juan Ignacio
2018-08-31T09:25:39Z
2018-08-31T09:25:39Z
2018
MRS Advances, 2018, Volume 3, Issue 57-58 (Electronic and Photonic Materials), pp. 3359-3365
http://uvadoc.uva.es/handle/10324/31333
https://doi.org/10.1557/adv.2018.366
Upgraded metallurgical-grade silicon (UMG Si) solar cells with different ranges of efficiencies were characterized through electroluminescence imaging (ELi) and light-beam induced current (LBIC) measurements. The results showed a good correlation between the EL intensity and the efficiency of the solar cells. ELi images gave a bright contrast at the defects, grain boundaries and intragrain defects, and dark contrast inside the grain bodies. Metallic impurities are much more present in some cells due to the directional solidification of the Si ingot. Local short-circuit current mapping with LBIC measurements revealed a bright zone in the neighborhoods of the defects due to the depletion of impurities. Internal quantum efficiencies (IQE) and effective diffusion lengths (Leff) were calculated using different excitation wavelengths. High resolution LBIC measurements revealed micrometric clusters of impurities around intragrain defects
Spanish MINECO project, ref. ENE2014-56069-C4-4-R and “Junta de Castilla y León (Spain)” project number VA081U16
application/pdf
eng
Materials Research Society
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
Attribution-NonCommercial-NoDerivatives 4.0 International
Defect characterization of UMG mc-Si solar cells using LBIC and luminescence imaging techniques
info:eu-repo/semantics/bookPart
https://www.cambridge.org/core/journals/mrs-advances/article/defect-characterization-of-umg-mcsi-solar-cells-using-lbic-and-luminescence-imaging-techniques/013F9765D4373C9FA8A0A29FE3B50F47
oai:uvadoc.uva.es:10324/528852023-06-06T12:09:19Zcom_10324_1158com_10324_931com_10324_894col_10324_1243
Moretón Fernández, Ángel
Gallardo Saavedra, Sara
Jiménez Martín, Marta María
Alonso Gómez, Víctor
Hernandez, Luis
Morales Aragonés, José Ignacio
Martínez Sacristán, Óscar
Gonzalez, Miguel Angel
Jiménez López, Juan Ignacio
2022-04-21T09:44:12Z
2022-04-21T09:44:12Z
2019
Proceedings of the 36th European Photovoltaic Solar Energy Conference and Exhibition. DOI: 10.4229/EUPVSEC20192019-4AV.1.38
3-936338-60-4
https://uvadoc.uva.es/handle/10324/52885
10.4229/EUPVSEC20192019-4AV.1.38
Nowadays, electroluminescence imaging (Eli) appears as an emerging technique in the maintenance of
photovoltaic (PV) plants. There is a concern about how the current injection needed in ELi measurements can affect the PV modules service life, and how these periodical inspections can affect the long term life of the modules. In order to give a practical answer to this problem, a series of tests consisting of long periods of current injection on several monocrystalline silicon modules has been carried out. The modules tested had already fulfilled their useful life and present multiple defects. In order to analyze how the current injection affects the state of the module, images of infrared thermography (IRT) and ELi were acquired during the current injection period. The subsequent analysis of these images shows only a small effect during the heating period in the EL intensity results at the beginning of each test, not affecting the module performance.
Proyecto de Investigación ENE2017-89561-C4-3-R (MCIN)
Proyecto de Investigación RTC-2017-6712-3 (MCIN)
Proyecto de Investigación VA283P18 (Junta de Castilla y León)
application/pdf
eng
info:eu-repo/semantics/openAccess
Influence of Large Periods of DC Current Injection in c-Si Photovoltaic Panels
info:eu-repo/semantics/bookPart
info:eu-repo/semantics/publishedVersion
https://www.eupvsec-proceedings.com/proceedings?char=I&paper=48455
oai:uvadoc.uva.es:10324/528862022-08-24T08:41:50Zcom_10324_1158com_10324_931com_10324_894col_10324_1243
Gallardo Saavedra, Sara
Moreton, Angel
Jimenez, Marta
Alonso, Victor
Hernandez, Luis
Martínez Sacristán, Óscar
Gonzalez, Miguel Angel
Morales, Jose Ignacio
2022-04-21T10:20:58Z
2022-04-21T10:20:58Z
2019
Proceedings of the 36th European Photovoltaic Solar Energy Conference and Exhibition. DOI: 10.4229/EUPVSEC20192019-4AV.2.20
3-936338-60-4
https://uvadoc.uva.es/handle/10324/52886
Different techniques can be used to detect and quantify PV modules anomalies, as visual inspections,
electrical tests like the I-V curve test, infrared thermography (IRT) or electroluminescence (EL). PV plants operators
usually apply only one or two of them within the Operation and Maintenance (O&M) activities. Additionally,
researchers usually studied them separately. However, these methods provide complementary results, glimpsing
interesting information about the PV site state. The main strength of the research performed is the simultaneous study
of all these inspection techniques, studying the correlation between them. Results confirm that, EL and IRT under
current injection on modules are closely correlated, while IRT under normal operation (sun exposure) reveals
complementary information not detected in EL but existing in the visible spectrum. In conclusion, it is advisable using
as many techniques as possible to characterize the actual state of the module and to explain its I-V curve.
Ministerio de Ciencia e Innovación (Proyecto de Investigación ENE2017-89561-C4-3-R)
Ministerio de Ciencia e Innovación (Proyecto de Investigación RTC-2017-6712-3)
Junta de Castilla y León (Proyecto de Investigación VA283P18)
application/pdf
eng
info:eu-repo/semantics/openAccess
Failure diagnosis on photovoltaic modules using thermography, electroluminescence, Rgb and I-V techniques
info:eu-repo/semantics/bookPart
info:eu-repo/semantics/publishedVersion
oai:uvadoc.uva.es:10324/529002023-06-06T12:10:21Zcom_10324_1158com_10324_931com_10324_894col_10324_1243
Sanchez, Luis Alberto
Moretón Fernández, Ángel
Jiménez Martín, Marta María
Rodríguez Conde, Sofía
Guada, Miguel
González Rebollo, Miguel Ángel
Martínez Sacristán, Óscar
Jiménez López, Juan Ignacio
2022-04-21T15:49:23Z
2022-04-21T15:49:23Z
2018
Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition. DOI: 10.4229/35thEUPVSEC20182018-2DV.3.36
3-936338-50-7
https://uvadoc.uva.es/handle/10324/52900
10.4229/35thEUPVSEC20182018-2DV.3.36
There is an increasing demand for characterizing multicrystalline solar cells at different stages of its
service life. Luminescence techniques, e.g. electroluminescence (EL) and photoluminescence (PL), have acquired a paramount interest in the last years. These techniques are used in imaging mode, allowing to take a luminescence picture at a full wafer/cell scale. This imaging approach is fast and sensitive, but has a low spatial resolution, which avoids a detailed analysis of the defect distribution, which can led to misinterpretations about critical parameters as the minority carrier diffusion length, or the internal and external quantum efficiencies. If one complements these techniques with high spatial resolution techniques, such as light beam induced current (LBIC), one can study the electrical activity
of the defects at a micrometric scale, providing additional understanding about the role played by the defects in full wafer/cell luminescence images. The combination of the macroscopic and microscopic resolution scales is necessary for the analysis of the full luminescence images in mc-Si solar cells.
Proyecto de Investigación ENE2014-56069-C4- 4-R (MCIN)
Proyecto de Investigación ENE2017-89561-C4-3-R (MCIN)
Junta de Castilla y León (Proyecto de Investigación VA081U16)
application/pdf
eng
info:eu-repo/semantics/openAccess
Electroluminescence imaging and light-beam induced current as characterization techniques of multi-crystalline si solar cells
info:eu-repo/semantics/bookPart
info:eu-repo/semantics/draft