2024-03-28T18:08:55Zhttp://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/322962021-06-24T07:19:17Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1272col_10324_28028
Characterization of amorphous Si generated through classical molecular dynamics simulations
Santos Tejido, Iván
López Martín, Pedro
Aboy Cebrián, María
Marqués Cuesta, Luis Alberto
Pelaz Montes, María Lourdes
Producción Científica
We performed a characterization of the energetic and structural features of amorphous Si using classical molecular dynamics simulations. We generated amorphous Si samples from different procedures: quenching liquid silicon, accumulating the damage generated by subsequent energetic recoils, and accumulating point defects. The obtained energetic and structural features of these types of samples are analyzed to elucidate which procedure provides a more realistic a-Si structure.
2018-10-24T11:35:11Z
2018-10-24T11:35:11Z
2017
info:eu-repo/semantics/conferenceObject
2017 Spanish Conference on Electron Devices (CDE). Proceedings, 8-10 February 2017, Barcelona, pp. 1-4.
978-1-5090-5072-7
http://uvadoc.uva.es/handle/10324/32296
https://doi.org/10.1109/CDE.2017.7905213
eng
https://ieeexplore.ieee.org/document/7905213
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
© 2017 IEEE
Attribution-NonCommercial-NoDerivatives 4.0 International
Institute of Electrical and Electronics Engineers (IEEE)
oai:uvadoc.uva.es:10324/322972021-06-24T07:19:16Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1272col_10324_28028
Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique
López Martín, Pedro
Santos Tejido, Iván
Aboy Cebrián, María
Marqués Cuesta, Luis Alberto
Trochet, M.
Mousseau, N.
Pelaz Montes, María Lourdes
Producción Científica
The modeling of self-interstitial defects evolution is key for process and device optimization. For a self-interstitial cluster of a given size, several configurations or topologies exist, but conventional models assume that the minimum energy one is instantaneously reached. The existence of significant energy barriers for configurational transitions may change the picture of defect evolution in non-equilibrium processes (such as ion implantation), and contribute to explain anomalous defect observations. In this work, we present a method to determine the energy barriers for topological transitions among small self-interstitial defects, which is applied to characterize the Si self-interstitial and the di-interstitial cluster.
2018-10-24T11:51:00Z
2018-10-24T11:51:00Z
2017
info:eu-repo/semantics/conferenceObject
2017 Spanish Conference on Electron Devices (CDE). Proceedings, 8-10 February 2017, Barcelona
978-1-5090-5072-7
http://uvadoc.uva.es/handle/10324/32297
https://doi.org/10.1109/CDE.2017.7905224
eng
https://ieeexplore.ieee.org/document/7905224
info:eu-repo/semantics/openAccess
© 2017 IEEE
Institute of Electrical and Electronics Engineers (IEEE)
oai:uvadoc.uva.es:10324/322982021-09-17T12:12:56Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1272col_10324_28028
Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion
Santos Tejido, Iván
Aboy Cebrián, María
Marqués Cuesta, Luis Alberto
López Martín, Pedro
Ruiz Prieto, Manuel
Pelaz Montes, María Lourdes
Hernández Díaz, A.M.
Castrillo, P.
Producción Científica
In this work we propose a methodology to analyze the elastic energy interaction at the atomic level between Si self-interstitials and extended defects in crystalline Si. The representation of this energy in maps in 2D planes shows the anisotropic nature of the elastic interaction. This elastic energy maps can be used to understand diffusion trajectories of Si self-interstitials around extended defects obtained from classical molecular dynamics simulations. The combined analysis of these trajectories and the elastic energy maps shows preferential capture directions around extended defects.
2018-10-24T12:11:13Z
2018-10-24T12:11:13Z
2016
info:eu-repo/semantics/conferenceObject
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, 2016, p. 35-37
978-1-5090-0818-6
http://uvadoc.uva.es/handle/10324/32298
https://doi.org/10.1109/SISPAD.2016.7605142
eng
https://ieeexplore.ieee.org/document/7605142
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
Attribution-NonCommercial-NoDerivatives 4.0 International
Institute of Electrical and Electronics Engineers (IEEE)
oai:uvadoc.uva.es:10324/336172021-06-23T10:09:24Zcom_10324_1148com_10324_931com_10324_894col_10324_1272
A partially complementary chiral metamaterial based on a four-cranks resonator
Barba García, Ismael
Grande Sáez, Ana María
López Cabeceira, Ana Cristina
Molina Cuberos, Gregorio José
Represa Fernández, José Benito
Producción Científica
A partially complementary bilayer chiral metamaterial (CMM) is proposed and numerically studied. It exhibits a strong optical activity and a small circular dichroism. The retrieval results reveal that a negative refractive index is realized in a narrow band around the resonance of the chirality parameter.
2018-12-21T11:37:09Z
2018-12-21T11:37:09Z
2015
info:eu-repo/semantics/conferenceObject
9th European Conference on Antennas and Propagation, to be held in Lisbon, Portugal, on 12-17 APRIL 2015.
http://uvadoc.uva.es/handle/10324/33617
eng
http://www.eucap2015.org/
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
Attribution-NonCommercial-NoDerivatives 4.0 International
European Association on Antennas and Propagation (EurAAP)
oai:uvadoc.uva.es:10324/336192021-06-23T10:09:29Zcom_10324_1148com_10324_931com_10324_894col_10324_1272
A complementary chiral metamaterial with giant electromagnetic activity and low losses
Barba García, Ismael
Grande Sáez, Ana María
López Cabeceira, Ana Cristina
Represa Fernández, José Benito
Molina Cuberos, Gregorio José
Fernández Fernández, Óscar
Gómez Gómez, Álvaro
Producción Científica
A planar complementary metamaterial, as well as its corresponding inverse structure, has been designed and characterized. Numerical results (using commercial software) are presented here. The structure shows a giant gyrotropy (chirality) as well as very low losses.
2018-12-21T11:50:53Z
2018-12-21T11:50:53Z
2016
info:eu-repo/semantics/conferenceObject
The 7th International Conference on Metamaterials, Photonic Crystals and Plasmonics META´16, 25-28 julio 2016, Málaga
http://uvadoc.uva.es/handle/10324/33619
eng
https://metaconferences.org/ocs/index.php/META16/META16
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
Attribution-NonCommercial-NoDerivatives 4.0 International
oai:uvadoc.uva.es:10324/336222021-06-23T10:09:25Zcom_10324_1148com_10324_931com_10324_894col_10324_1272
Numerical Study of the Electromagnetic Behavior of Multilayer Chiral Honeycombs
Barba García, Ismael
Grande Sáez, Ana María
López Cabeceira, Ana Cristina
Producción Científica
Honeycomb structures have been widely used in different sectors, such as aerospace, construction,packaging, etc., due to their mechanical properties. They also have been proposed in order to use their electromagnetic properties, for example, to perform metamaterial structures. In some cases, structures, which geometrically are chiral in a two-dimensional plane, have been used too. Some authors have studied their electromagnetic behavior, in order to check whether their structural chirality translates into chiral electromagnetic behavior with
negative results.
2018-12-21T12:19:53Z
2018-12-21T12:19:53Z
2016
info:eu-repo/semantics/conferenceObject
XI Iberian Meeting on Computational Electromagnetics (EIEC), 2016, Oviedo
http://uvadoc.uva.es/handle/10324/33622
eng
https://eiec2016.wordpress.com/
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
Attribution-NonCommercial-NoDerivatives 4.0 International
oai:uvadoc.uva.es:10324/336232021-06-23T10:09:30Zcom_10324_1148com_10324_931com_10324_894col_10324_1272
Diode switchable chiral metamaterial structure for polarization manipulation
Fernández Fernández, Óscar
Gómez Gómez, Álvaro
Vegas García, Ángel
Molina Cuberos, Gregorio José
Barba García, Ismael
Producción Científica
This communication presents a novel diode switchable chiral metamaterial structure that manipulates the polarization in different ways depending on the active bias lines. Three different bias states that provide three totally different behaviors have been considered: polarization rotator, circular polarization converter and linear to circular converter.
2018-12-21T12:35:37Z
2018-12-21T12:35:37Z
2017
info:eu-repo/semantics/conferenceObject
2017 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO), 17-19 May 2017, Sevilla
978-1-5090-4837-3
http://uvadoc.uva.es/handle/10324/33623
https://doi.org/10.1109/NEMO.2017.7964226
eng
https://ieeexplore.ieee.org/document/7964226
info:eu-repo/semantics/openAccess
© 2017 IEEE
Institute of Electrical and Electronics Engineers (IEEE)
oai:uvadoc.uva.es:10324/336242021-06-23T10:09:26Zcom_10324_1148com_10324_931com_10324_894col_10324_1272
A bi-isotropic hexachiral grid in PCB
Barba García, Ismael
Grande Sáez, Ana María
López Cabeceira, Ana Cristina
Represa Fernández, José Benito
Producción Científica
A bi-isotropic chiral structure has been numerically studied. It is composed of two layers of planar, 2D-chiral, honeycomb-like, parallel grids. Electromagnetic activity (gyrotropy) is observed. That leads to a strong chiral behavior with low losses.
2018-12-21T12:55:26Z
2018-12-21T12:55:26Z
2017
info:eu-repo/semantics/conferenceObject
2017 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO), 17-19 May 2017, Sevilla
978-1-5090-4837-3
http://uvadoc.uva.es/handle/10324/33624
https://doi.org/10.1109/NEMO.2017.7964251
eng
https://ieeexplore.ieee.org/document/7964251
info:eu-repo/semantics/openAccess
© 2017 IEEE
Institute of Electrical and Electronics Engineers (IEEE)
oai:uvadoc.uva.es:10324/336252021-06-23T10:09:27Zcom_10324_1148com_10324_931com_10324_894col_10324_1272
Circular Polarization Selection Using an Asymmetric SRR Mirror
Barba García, Ismael
Fernández Fernández, Óscar
Grande Sáez, Ana María
López Cabeceira, Ana Cristina
Represa Fernández, José Benito
Producción Científica
Reflective surfaces (mirrors) have a wide use in the field of optical or electromagnetic applications, wherever it is needed to redirect electromagnetic radiation. Though mirror technology exists since more than 8,000 years ago, there is not yet a well-established
technology for circular polarization control: even more, conventional mirrors reverse the handedness or circularly polarized waves.
Bi-isotropic (chiral) structures have been proposed to
manipulate the polarization of travelling waves
(optical/electromagnetic activity and circular dichroism).
Nevertheless, up to date, all the known examples of
such materials are non-reciprocal.
2018-12-21T13:19:31Z
2018-12-21T13:19:31Z
2018
info:eu-repo/semantics/conferenceObject
XII Iberian Meeting on Computational Electromagnetics, 15-18 May 2018 Coimbra, Portugal
http://uvadoc.uva.es/handle/10324/33625
eng
http://eiec2018.co.it.pt/
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
Attribution-NonCommercial-NoDerivatives 4.0 International
oai:uvadoc.uva.es:10324/338922021-06-24T07:19:17Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1272col_10324_28028
IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions
López Martín, Pedro
Aboy Cebrián, María
Muñoz, I.
Santos Tejido, Iván
Marqués Cuesta, Luis Alberto
Couso, Carlos
Ullán, Miguel
Pelaz Montes, María Lourdes
Producción Científica
Electronic devices operating in harsh radiation environments must withstand high radiation levels with minimal performance degradation. Recent experiments on the radiation hardness of a new vertical p-type JFET power switch have shown a significant reduction of forward drain current under non-ionizing conditions. In this work, atomistic simulations are used to study the impact of irradiation-induced displacement damage on forward characteristics. Damage models have been updated to produce a better description of damage-dopant interactions at RT. Our results show that excess self-interstitials produced by irradiation deactivate a significant amount of B atoms, thus reducing the effective dopant concentration.
2019-01-10T12:50:41Z
2019-01-10T12:50:41Z
2019
info:eu-repo/semantics/conferenceObject
2018 Spanish Conference on Electron Devices (CDE). Proceedings, 14-16 Nov. 2018, Salamanca.
978-1-5386-5779-9
http://uvadoc.uva.es/handle/10324/33892
https://doi.org/10.1109/CDE.2018.8596953
https://doi.org/10.1109/CDE.2018.8596953
eng
https://ieeexplore.ieee.org/document/8596953
info:eu-repo/semantics/openAccess
© 2019 IEEE
Institute of Electrical and Electronics Engineers (IEEE).
oai:uvadoc.uva.es:10324/339032022-06-28T11:39:40Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1272col_10324_28028
Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential
Martín Encinar, Luis
Santos Tejido, Iván
López Martín, Pedro
Marqués Cuesta, Luis Alberto
Aboy Cebrián, María
Pelaz Montes, María Lourdes
Producción Científica
We used classical molecular dynamics simulations to reproduce basic properties of Si, Ge and SiGe using different empirical potentials available in the literature. The empirical potential that offered the better compromise with experimental data was used to study the surface stability of these materials. We considered the (100), (100)2×1 and (111) surfaces, and we found the processing temperature range to avoid the structural degradation of studied surfaces.
2019-01-11T07:44:36Z
2019-01-11T07:44:36Z
2019
info:eu-repo/semantics/conferenceObject
2018 Spanish Conference on Electron Devices (CDE). Proceedings, 14-16 Nov. 2018, Salamanca.
978-1-5386-5779-9
http://uvadoc.uva.es/handle/10324/33903
https://doi.org/10.1109/CDE.2018.8597030
eng
https://ieeexplore.ieee.org/document/8597030
info:eu-repo/semantics/openAccess
© 2018 IEEE
Institute of Electrical and Electronics Engineers (IEEE).
oai:uvadoc.uva.es:10324/665482024-03-07T20:00:36Zcom_10324_28025com_10324_954com_10324_894com_10324_1148com_10324_931col_10324_28028col_10324_1272
First Principles Characterization of PnVm Clusters in Crystalline Silicon
Santos Tejido, Iván
Aboy Cebrián, María
López Martín, Pedro
Marqués Cuesta, Luis Alberto
Martín Encinar, Luis
Pelaz Montes, María Lourdes
Producción Científica
We used ab initio calculations to characterize PnVm(n=1−6,m=1,2) clusters in crystalline Si by calculating their formation energy, dipole moment and local vibrational modes. This information served us to discuss which PnVm complexes might be more relevant in doping during epitaxial growth or by ion implantation, and their possible behavior under microwave annealing treatments that was recently demonstrated as a promising process in technological nodes beyond 3 nm.
2024-03-07T09:03:10Z
2024-03-07T09:03:10Z
2023
9999-01-01
info:eu-repo/semantics/conferenceObject
14 Spanish Conference on Electron Devices (CDE), Valencia, Spain, 2023
979-8-3503-0240-0
https://uvadoc.uva.es/handle/10324/66548
10.1109/CDE58627.2023.10339444
eng
https://ieeexplore.ieee.org/document/10339444
info:eu-repo/semantics/restrictedAccess
© IEEE
Institute of Electrical and Electronics Engineers (IEEE).
oai:uvadoc.uva.es:10324/665502024-03-07T20:00:37Zcom_10324_28025com_10324_954com_10324_894com_10324_1148com_10324_931col_10324_28028col_10324_1272
Molecular Dynamics Study of Stress Relaxation During Ge Deposition on Si(100) 2×1 Substrates
Martín Encinar, Luis
Marqués Cuesta, Luis Alberto
Aboy Cebrián, María
López Martín, Pedro
Santos Tejido, Iván
Pelaz Montes, María Lourdes
Producción Científica
We studied epitaxial growth of Ge films on Si(001) 2×1 at different temperatures using classical molecular dynamics simulations. Ge-Si intermixing contributes to strain accommodation mostly in the original Si substrate surface and first grown Ge layer. Stress accumulation is further released by the generation of dislocations whose amount and type depend on temperature. At high temperatures, a larger amount and more variety of dislocations are formed, thus affecting the surface morphology and consequently the size of 3D islands.
2024-03-07T09:38:00Z
2024-03-07T09:38:00Z
2023
9999-01-01
info:eu-repo/semantics/conferenceObject
14th Spanish Conference on Electron Devices (CDE), Valencia, Spain, 2023
979-8-3503-0240-0
https://uvadoc.uva.es/handle/10324/66550
10.1109/CDE58627.2023.10339527
eng
https://ieeexplore.ieee.org/document/10339527
info:eu-repo/semantics/restrictedAccess
© IEEE
Institute of Electrical and Electronics Engineers (IEEE)