RT info:eu-repo/semantics/article
T1 Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon
A1 Marqués Cuesta, Luis Alberto
A1 Santos Tejido, Iván
A1 Pelaz Montes, María Lourdes
A1 López Martín, Pedro
A1 Aboy Cebrián, María
K1 Atomistic simulation
K1 Molecular dynamics
K1 Dinámica molecular
AB We have studied the early stages of self-interstitial clustering in silicon using molecular dynamics simulation techniques. We have generated silicon samples of over 200,000 atoms where we introduced a 0.5% extra concentration of self-interstitials. Then samples were annealed at several temperatures. During the simulations we observed the formation of interstitial clusters with different atomic structures, ranging from spherical and amorphous-like clusters, to highly ordered extended configurations such as (110) chains, {111} rod-like defects and dislocation loops, and {100} planar defects. This last type of defects, while common in germanium, have not been observed in silicon until very recently, in ultra-fast laser annealing experiments. The particular morphology of formed interstitial clusters is found to be related to the annealing temperature, as it is observed in the experiments. From the molecular dynamics simulations we have analyzed the atomic mechanisms leading to the formation and growth of interstitial clusters, with special attention to the newly found {100} planar defects
PB Elsevier
YR 2016
FD 2016
LK http://uvadoc.uva.es/handle/10324/28014
UL http://uvadoc.uva.es/handle/10324/28014
LA eng
NO Materials Science in Semiconductor Processing Volume 42, Part 2, 2016, Pages 235-238
NO Producción Científica
DS UVaDOC
RD 25-sep-2024