RT info:eu-repo/semantics/article T1 Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon A1 Marqués Cuesta, Luis Alberto A1 Aboy Cebrián, María A1 Dudeck, Karleen J. A1 Botton, Gianluigi A. A1 Knights, Andrew P. A1 Gwilliam, Russell M. K1 Atomistic model K1 Silicon K1 Silicio AB We propose an atomistic model to describe extended {311} defects in silicon. It is based on the combination of interstitial and bond defect chains. The model is able to accurately reproduce not only planar {311} defects but also defect structures that show steps, bends, or both. We use molecular dynamics techniques to show that these interstitial and bond defect chains spontaneously transform into extended {311} defects. Simulations are validated by comparing with precise experimental measurements on actual {311} defects. The excellent agreement between the simulated and experimentally derived structures, regarding individual atomic positions and shape of the distinct structural {311} defect units, provides strong evidence for the robustness of the proposed model. PB AIP Publishing SN 0021-8979 YR 2014 FD 2014 LK http://uvadoc.uva.es/handle/10324/28616 UL http://uvadoc.uva.es/handle/10324/28616 LA eng NO Journal of Applied Physics, 2014, 115, p. 143514 NO Producción Científica DS UVaDOC RD 28-mar-2024