RT info:eu-repo/semantics/article T1 Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing A1 Fisicaro, Giuseppe A1 Pelaz Montes, María Lourdes A1 Aboy Cebrián, María A1 López Martín, Pedro A1 Italia, Markus A1 Huet, Karim A1 Cristiano, Filadelfo A1 Essa, Zahi A1 Yang, Qui A1 Bedel Pereira, Elena A1 Quillec, Maurice A1 La Magna, Antonino AB We investigate the correlation between dopant activation and damage evolution in boron-implanted silicon under excimer laser irradiation. The dopant activation efficiency in the solid phase was measured under a wide range of irradiation conditions and simulated using coupled phase-field and kinetic Monte Carlo models. With the inclusion of dopant atoms, the presented code extends the capabilities of a previous version, allowing its definitive validation by means of detailed comparisons with experimental data. The stochastic method predicts the post-implant kinetics of the defect-dopant system in the far-from-equilibrium conditions caused by laser irradiation. The simulations explain the dopant activation dynamics and demonstrate that the competitive dopant-defect kinetics during the first laser annealing treatment dominates the activation phenomenon, stabilizing the system against additional laser irradiation steps. PB IOP Publishing SN 1882-0778 YR 2014 FD 2014 LK http://uvadoc.uva.es/handle/10324/28622 UL http://uvadoc.uva.es/handle/10324/28622 LA eng NO Applied Physics Express, 2014, Volume 7, Number 2 NO Producción Científica DS UVaDOC RD 29-mar-2024