RT info:eu-repo/semantics/article T1 Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces A1 Landesman, Jean-Pierre A1 Cassidy, Daniel T. A1 Fouchier, Marc A1 Pargon, Erwine A1 Levallois, Christophe A1 Mokhtari, Merwan A1 Jiménez López, Juan Ignacio A1 Torres, Alfredo K1 Semiconductor materials; (250.5230) Photoluminescence; (250.1500) Cathodoluminescence; (310.4925) Other properties (stress, chemical, etc.); (310.5448) Polarization, other optical properties; (240.0310) Thin films AB We investigated deformation of InP that was introduced bythin, narrow, dielectric SiNx stripes on the (100) surface ofInP substrates. Quantitative optical measurements wereperformed using two different techniques based on luminescencefrom the InP: first, by degree of polarization ofphotoluminescence; and second, by cathodoluminescence spectroscopy. The two techniques provide complementary information on deformation of the InP and thus together provide a means to evaluate approaches to simulation of the deformation owing to dielectric stripes. Ultimately, these deformations can be used to estimate changes in refractive index and gain that are a result of the stripes PB Optical Society of America YR 2018 FD 2018 LK http://uvadoc.uva.es/handle/10324/31318 UL http://uvadoc.uva.es/handle/10324/31318 LA eng NO Optics Letters, Vol. 43, No. 15 DS UVaDOC RD 28-mar-2024