RT info:eu-repo/semantics/article
T1 About the interaction between a laser beam and group IV nanowires: a study of the electromagnetic field enhancement in homogeneous and heterostructured nanowires
A1 Pura Ruiz, José Luis
A1 Anaya, Julián
A1 Jiménez López, Juan Ignacio
AB The optical properties of semiconductor nanowires (NWs) are object of studybecause they are the building blocks of the future nanophotonic devices. Thehigh refractive index and its reduced dimension, make them suitable forphoton engineering. The study of the interaction between NWs and visiblelight has revealed resonances of the light absorption/scattering by the NWs.Micro-Raman spectroscopy is used as a characterization method of semiconductorNWs. The relation between the Raman intensity and the incidentelectromagnetic (EM) field permits to study the light/NW interaction throughthe micro-Raman spectra of individual NWs. As compared to either metallicor dielectric NWs, the semiconductor NWs add additional tools to modify itsinteraction with light, for example, the composition, the presence ofheterostructures, both axial and radial, doping, and the surface morphology.One presents herein a study of the optical response of group IV semiconductorNWs to visible photons. The study is experimentally carried out through the micro-Raman spectroscopy of different group IV NWs, both homogeneous and heterostructured (SiGe/Si), and the results are analyzed in terms of the EM modeling of the light/NW interaction using finite element methods (FEMs). The heterostructures are seen to produce additional resonances allowing new photonic capacities to the semiconductor NWs.
PB WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/31319
UL http://uvadoc.uva.es/handle/10324/31319
LA eng
NO Phys. Status Solidi A 2018, 1800336
DS UVaDOC
RD 25-abr-2024