RT info:eu-repo/semantics/bookPart
T1 Electromagnetic Field Enhancement on Axially Heterostructured NWs: The Role of the Heterojunctions
A1 Pura Ruiz, José Luis
A1 Souto Bartolomé, Jorge Manuel
A1 Periwal, Priyanka
A1 Baron, Thierry
A1 Jiménez López, Juan Ignacio
K1 Nanowires, silicon, light-matter interaction, light enhancement, heterojunctions
AB Semiconductor nanowires are the building blocks of future nanoelectronic devices. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. We carried out experimental measurements through the micro-Raman spectroscopy of different group IV nanowires, both homogeneous Si nanowires and axially heterostructured SiGe/Si nanowires. These experimental measurements show an enhancement of the Raman signal in the vicinity of the heterojunction of SiGe/Si nanowires. The results are analysed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances, and the results are understood as a consequence of a finite change in the relative permittivity of the material atthe SiGe/Si heterojunction. This effect opens a path to controlling interactions between light and matter at the nanoscale with direct applications in photonic nanodevices.
PB The Minerals, Metals & Materials Society
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/31324
UL http://uvadoc.uva.es/handle/10324/31324
LA eng
NO Journal of ELECTRONIC MATERIALS, Vol. 47, No. 9, 2018
DS UVaDOC
RD 24-abr-2024