RT info:eu-repo/semantics/article
T1 Residual Strain and Electrical Activity of Defects in Multicrystalline Silicon Solar Cells
A1 Martínez Sacristán, Óscar
A1 Mass, Julio
A1 Tejero, A.
A1 Moralejo, B.
A1 Hortelano Santos, Vanesa
A1 González Rebollo, Miguel Ángel
A1 Jiménez López, Juan Ignacio
A1 Parra, V.
K1 Silicio cristalino
K1 Crystalline silicon
AB The growth process by casting methods of multi-crystalline Si results in a crystalline material with, among other defects, a high density of dislocations and grain boundaries. Impurity incorporation and their gathering around grain boundaries and dislocations seem to be the main factor determining the electrical activity of those defects, which limit the minority carrier lifetime. In this work, we analyze multi-crystalline Si samples by combining etching processes to reveal the defects, Raman spectroscopy for strain measurements, and light beam induced current measurements for the localization of electrically active defects. In particular, we have explored the etching routes capable to reveal the main defects (grain boundaries and dislocation lines), while their electrical activity is studied by the light beam induced current technique. We further analyze the strain levels around these defects by Raman micro-spectroscopy, aiming to obtain a more general picture of the correlation between residual stress and electrical activity of the extended defects. The higher stress levels are observed around intra-grain defects associated with dislocation lines, rather than around the grain boundaries. On the other hand, the intra-grain defects are also observed to give dark light beam induced current contrast associated with a higher electrical activity of these defects as compared to the grain boundaries
PB Polish Academy of Sciences Institute of  Physics
SN 1898-794X
YR 2014
FD 2014
LK http://uvadoc.uva.es/handle/10324/32379
UL http://uvadoc.uva.es/handle/10324/32379
LA eng
NO Acta Physica Polonica A 2014; 125. pp. 1013-1016
NO Producción Científica
DS UVaDOC
RD 26-abr-2024