RT info:eu-repo/semantics/conferenceObject
T1 Defects created by chemical and laser texturization on the surface of mc-Si wafers studied by optical means [Poster]
A1 Vera, David
A1 Mass, Julio
A1 Manotas, Milton
A1 Cabanzo, Rafael
A1 Rodríguez Conde, Sofía
A1 Vicente, Jose María
A1 Martínez Sacristán, Óscar
AB Chemical texturization of mc-Si wafer surfaces produces different patterns, allowing for a diffuse surface which increases the light absorption and the final cell efficiency. Alkaline chemical texturizations are typical for c-Si. Chemical texturizations based on the HF:HNO3solution are a general option for mc-Si, giving different surface morphology textures: pits, motheyes, grooves, etc. Laser texturization processes have been also explored. Texturization processes can introduce detrimental defects in the material, e.g. laser texturization canproduce residual stresses or even amorphous phases.
YR 2017
FD 2017
LK http://uvadoc.uva.es/handle/10324/35199
UL http://uvadoc.uva.es/handle/10324/35199
LA eng
NO 17th International Conference DRIP: Defects-Recognition, Imaging and Physics in Semiconductors, 8th to the 12th of October 2017, Valladolid, Spain
DS UVaDOC
RD 24-abr-2024