RT info:eu-repo/semantics/article
T1 Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates
A1 García, Iván
A1 Barrutia, Laura
A1 Dadgostar, Shabnam
A1 Hinojosa, Manuel
A1 Johnson, Andrew
A1 Rey Stolle, Ignacio
K1 Multijunction solar cells
K1 Células fotovoltaicas multiunión
AB Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical analysis performed using realistic device parameters indicates that the GaInAs middle cell can be drastically thinned to 1000 nm while increasing its In content to 8% with an efficiency loss in the 3-junction cell below 3%. The experimental results show that the formation of macroscopic cracks is prevented in thinned GaInAs/Ge 2-junction and GaInP/GaInAs/Ge 3-junction cells. These prototype crack-free multijunction cells demonstrate the concept and were used to rule out any possible component integration issue. The performance metrics are limited by the high threading dislocation density over 2·107cm−2 in the virtual substrates used, but an almost current matched, crack-free, thinned 3-junction solar cell is demonstrated, and the pathway towards solar cells with higher voltages identified.
PB Elsevier
SN 0927-0248
YR 2021
FD 2021
LK https://uvadoc.uva.es/handle/10324/49461
UL https://uvadoc.uva.es/handle/10324/49461
LA eng
NO Solar Energy Materials and Solar Cells, 2021, vol. 225, 111034
NO Producción Científica
DS UVaDOC
RD 17-may-2024