RT info:eu-repo/semantics/article
T1 Fourier transform study of the complex electric field induced on axially heterostructured nanowires
A1 Pura Ruiz, José Luis
A1 Jiménez López, Juan Ignacio
K1 nanowires, axial heterostructures, Fourier transform, electromagnetic enhancement
AB We present in this work a study of the effect of Raman enhancement on axially heterostructuredsemiconductor nanowires (NWs). The investigation is motivated by the recent detection of aRaman signal enhancement effect at the heterojunction (HJ) of axially heterostructured NWs.Semiconductor NWs offer very interesting properties as compared to their bulk counterparts,making them the building blocks of future optoelectronic nanodevices. The use of HJs turns outto be essential for a great variety of devices. As a result, understanding the optical properties ofheterostructured NWs is a fundamental step for their possible application on future technologies.In order to unveil the underlying physics of the light/NW interaction, the complex-valuedelectromagnetic (EM) field distribution induced inside heterostructured NWs under lightexposure is studied. The use of the Fourier transform is presented as a key tool in order toascertain the different components of the EM field generated inside the NW. The results showthe presence of two components: one associated with the incident light beam and a second onewhich appears as a consequence of the presence of the axial HJ. This second component explainsthe emergence of the Raman enhancement effect as a result of the interaction of the incidentbeam with the dielectric discontinuity associated with the HJ.
PB IOP Publishing
YR 2019
FD 2019
LK https://uvadoc.uva.es/handle/10324/64914
UL https://uvadoc.uva.es/handle/10324/64914
LA eng
NO Nanotechnology, 2019, vol. 30, 465205 (6pp)
NO Producción Científica
DS UVaDOC
RD 09-may-2024