TY  - JOUR 
AU  - Santos Tejido, Iván
AU  - Castrillo, P.
AU  - Windl, W.
AU  - Drabold, D. A.
AU  - Pelaz Montes, María Lourdes
AU  - Marqués Cuesta, Luis Alberto
PY  - 2010
SN  - 2469-9950
UR  - http://uvadoc.uva.es/handle/10324/31965
AB  - We have used ab initio simulations to study the doping efficiency of amorphous semiconductors, in particular of B-doped amorphous Si. We have found that even in the optimum case of substitutional doping in dangling-bond free amorphous Si the holes...
LA  - eng
PB  - American Physical Society
KW  - Silicio cristalino
KW  - Crystalline silicon
TI  - Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency
DO  - https://doi.org/10.1103/PhysRevB.81.033203
ER  -