TY  - GEN 
AU  - Navarro, A.
AU  - Martínez Sacristán, Óscar
AU  - Galiana, B.
AU  - Lombardero, I.
AU  - Ochoa, M.
AU  - García, I.
AU  - Gabás, M.
AU  - Ballesteros, Carmen
AU  - Jiménez López, Juan Ignacio
AU  - Algora, C.
PY  - 2017
UR  - http://uvadoc.uva.es/handle/10324/35207
AB  - The development of a high quality 1eV material is one of the most import challenges in high efficiency solar cells development. The GaInP/GaInAs/1eV/Ge structure attained one of the highest solar cell efficiency, 44.0%. The dilute nitride GaNSbAs has...
LA  - eng
TI  - Cathodoluminescence characterization of the band gap energy in dilute nitride GaNSbAs alloys [Poster]
ER  -