TY  - JOUR 
AU  - Castán Lanaspa, María Helena
AU  - Dueñas Carazo, Salvador
AU  - Kukli, Kaupo
AU  - Kemell, Marianna
AU  - Ritala, Mikko
AU  - Leskelä, Markku
PY  - 2018
SN  - 1938-6737
UR  - http://uvadoc.uva.es/handle/10324/44919
AB  - The memory behavior of Al/Ti/ZrO2 : Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a...
LA  - eng
PB  - IOP Publishing
KW  - Memory maps
KW  - Mapas de memoria
TI  - Study of the influence of the dielectric composition of Al/Ti/ZrO2 : Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications
DO  - 10.1149/08508.0143ecst
ER  -