TY  - JOUR 
AU  - Pelaz Montes, María Lourdes
AU  - Marqués Cuesta, Luis Alberto
AU  - Aboy Cebrián, María
AU  - Santos Tejido, Iván
AU  - López Martín, Pedro
AU  - Duffy, Ray
PY  - 2010
SN  - 2166-2746
UR  - http://uvadoc.uva.es/handle/10324/31964
AB  - Ion implantation continues being the dominant technique to introduce dopants in Si devices. With the device feature size in the nanometer scale, the accurate and detailed description of as-implanted dopant and damage profiles is becoming key as...
LA  - eng
PB  - American Vacuum Society
KW  - Implantación de iones
KW  - Ion implantation
TI  - Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
DO  - https://doi.org/10.1116/1.3231481
ER  -