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dc.contributor.authorCarvajal, Joan Josep
dc.contributor.authorMena Rodríguez, José Manuel 
dc.contributor.authorBilousov, O. V.
dc.contributor.authorMartínez Sacristán, Óscar 
dc.contributor.authorJiménez López, Juan Ignacio 
dc.contributor.authorZubialevich, V.
dc.contributor.authorParbrook, Peter
dc.contributor.authorGeaney, H.
dc.contributor.authorO’Dwyer, C.
dc.contributor.authorDíaz, Francesc
dc.contributor.authorAguiló, Magdalena
dc.date.accessioned2016-12-15T09:36:21Z
dc.date.available2016-12-15T09:36:21Z
dc.date.issued2015
dc.identifier.citationECS Transactions, 2015, vol. 66, 163es
dc.identifier.issn1938-5862es
dc.identifier.urihttp://uvadoc.uva.es/handle/10324/21754
dc.descriptionProducción Científicaes
dc.description.abstractPorous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extraction efficiency in the past. However, these fabrication techniques require further postgrown processing steps, which increase the price of the final system. In this paper, we review the process followed towards the fabrication of fully porous GaN p-n junctions directly during the growth step, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherElectrochemical Societyes
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectLEDses
dc.titleFully porous GaN p-n junctions fabricated by Chemical Vapor Deposition: a green technology towards more efficient LEDses
dc.typeinfo:eu-repo/semantics/articlees
dc.relation.publisherversionhttp://ecst.ecsdl.org/es
dc.peerreviewedSIes
dc.description.projectJunta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA302U13)es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International


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