RT info:eu-repo/semantics/article
T1 Local electric  field enhancement at the heterojunction of Si/SiGe axially heterostructured nanowires under laser illumination
A1 Pura Ruiz, José Luis
A1 Anaya, Julián
A1 Souto Bartolomé, Jorge Manuel
A1 Carmelo Prieto, Ángel
A1 Rodríguez, Andrés
A1 Rodríguez, Tomás
A1 Jiménez López, Juan Ignacio
K1 Laser illumination
AB We present a phenomenon concerning the electric  eld enhancement at theheterojunction region of axially heterostructured Si/SiGe nanowires when the nanowireis illuminated by a focused laser beam. The electric  eld is sensed by micro Ramanspectroscopy, which permits to reveal the enhancement of the Raman signal arisingfrom the heterojunction region; the Raman signal per unit volume increases at least10 times with respect to the homogeneous Si, and SiGe nanowire segments. In orderto explore the physical meaning of this phenomenon, a 3-dimensional solution of theMaxwell equations of the interaction between the focused laser beam and the nanowirewas carried out by  nite element methods. A local enhancement of the electric  eldat the heterojunction was deduced; however, the magnitude of the electromagnetic eld enhancement only approaches the experimental one when the free carriers areconsidered, showing enhanced absorption at the carrier depleted heterojunction region.The existence of this e ect promises a way to improve the photon harvesting usingaxially heterostructured semiconductor NWs.
PB IOP
SN 0957-4484
YR 2016
FD 2016
LK http://uvadoc.uva.es/handle/10324/21759
UL http://uvadoc.uva.es/handle/10324/21759
LA eng
NO Nanotechnology, Volume 27, Number 45
NO Producción Científica
DS UVaDOC
RD 27-abr-2024