RT info:eu-repo/semantics/article
T1 Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation
A1 Santos Tejido, Iván
A1 Ruiz Prieto, Manuel
A1 Aboy Cebrián, María
A1 Marqués Cuesta, Luis Alberto
A1 López Martín, Pedro
A1 Pelaz Montes, María Lourdes
K1 Silicio cristalino
K1 Microscopia electrónica
K1 Crystalline silicon
AB We used atomistic simulation tools to correlate experimental transmission electron microscopy images of extended defects in crystalline silicon with their structures at an atomic level. Reliable atomic configurations of extended defects were generated using classical molecular dynamics simulations. Simulated high-resolution transmission electron microscopy (HRTEM) images of obtained defects were compared to experimental images reported in the literature. We validated the developed procedure with the configurations proposed in the literature for {113} and {111} rod-like defects. We also proposed from our procedure configurations for {111} and {001} dislocation loops with simulated HRTEM images in excellent agreement with experimental images.
PB Springer
SN 0361-5235
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/30982
UL http://uvadoc.uva.es/handle/10324/30982
LA eng
NO Journal of Electronic Materials, 2018, Volume 47, Issue 9, pp 4955–4958
NO Producción Científica
DS UVaDOC
RD 29-abr-2024