RT info:eu-repo/semantics/bachelorThesis
T1 Production of amorphous silicon thin films using Chemical Vapour Deposition
A1 Amo Iglesias, Lidia
A2 Universidad de Valladolid. Escuela de Ingenierías Industriales
K1 Silicio - Aplicaciones industriales
K1 Semiconductores
AB Hydrogenated amorphous silicon thin films have been prepared using the Plasma Enhanced Chemical Vapor Deposition (13.56 MHz PECVD) technique over two kinds of substrate, boro-silicate glass and double-sided polished silicon wafers. The films were grown from a gas mixture of silane (SiH4) gas and hydrogen (H2). The content of hydrogen is a critical factor in hydrogenated amorphous silicon films due to the necessity to control the Staebler Wronski effect. In this study, the effect of deposition temperature and time over the film thickness and the content of bonding configurations of hydrogen in the film has been investigated. It was concluded that the thin films produced at higher temperatures have a larger concentration of bonded hydrogen, but this does not affect the topographical structure. It has also been proved that the thickness of the film increases with the deposition time.
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/31198
UL http://uvadoc.uva.es/handle/10324/31198
LA eng
NO Departamento de Ingeniería Energética y Fluidomecánica
DS UVaDOC
RD 27-abr-2024