RT info:eu-repo/semantics/article
T1 Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study
A1 Santos Tejido, Iván
A1 Marqués Cuesta, Luis Alberto
A1 Pelaz Montes, María Lourdes
A1 López Martín, Pedro
A1 Aboy Cebrián, María
K1 Implantación de iones
K1 Silicio
K1 Dinámica molecular
K1 Silicon
K1 Ion implantation
K1 Molecular dynamics
AB We have studied the temperature effect on the damage generation mechanisms in silicon, suppressing the influence of dynamic annealing. We have done dedicated classical molecular dynamics simulations to determine how the ballistic mechanism and the thermal spikes are affected by temperature. We have quantified the minimum energy required to permanently displace an atom from its lattice position by a ballistic collision. We have found that the displacement energy threshold does not change appreciably with temperature. However, when subthreshold energy is simultaneously deposited in several neighboring particles in a finite volume, i.e. when thermal spikes occur, there is an enhancement of the generation of damage with increasing temperature. In high energy recoils both mechanisms are combined, and it results in an increase of the generated damage with temperature.
PB AIP Publishing
SN 0094-243X
YR 2012
FD 2012
LK http://uvadoc.uva.es/handle/10324/31960
UL http://uvadoc.uva.es/handle/10324/31960
LA eng
NO AIP Conference Proceedings, 2012, Volume 1496, 229
NO Producción Científica
DS UVaDOC
RD 30-abr-2024