TY  - JOUR 
AU  - González-Cordero, G.
AU  - González, M.B.
AU  - García, H.
AU  - Campabadal, F.
AU  - Dueñas, S.
AU  - Castán, H.
AU  - Jiménez-Molinos, F.
AU  - Roldán, J.B.
PY  - 2017
SN  - 0167-9317
UR  - https://uvadoc.uva.es/handle/10324/65983
AB  - A new model to account for variability in resistive memories is presented. It is included in a previous general current model that considers the main physical mechanisms involved in the conductive filament formation and disruption processes that lead...
LA  - spa
PB  - ELSEVIER
KW  - Resistive RAM
KW  - ReRAM
KW  - Physical model
KW  - Stochastic variability
TI  - A physically based model for resistive memories including a detailed temperature and variability description
DO  - 10.1016/j.mee.2017.04.019
ER  -