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    Por favor, use este identificador para citar o enlazar este ítem:http://uvadoc.uva.es/handle/10324/35098

    Título
    Electromagnetic enhancement effect on the atomically abrupt heterojunction of Si/InAs heterostructured nanowires
    Autor
    Pura Ruiz, José LuisAutoridad UVA
    Magdaleno de Benito, Álvaro Javier
    Muñoz Segovia, Daniel
    Glasser, M.L.
    Lugstein, A.
    Jiménez López, Juan IgnacioAutoridad UVA Orcid
    Año del Documento
    2019
    Editorial
    AIP Publishing
    Descripción
    Producción Científica
    Documento Fuente
    Journal of Applied Physics, 2019, Volume 125, Issue 6, 064303
    Resumo
    Semiconductor nanowires (NWs) present a great number of unique optical properties associated with their reduced dimension and internal structure. NWs are suitable for the fabrication of defect free Si/III-V heterostructures, allowing the combination of the properties of both Si and III-V compounds. We present here a study of the electromagnetic (EM) resonances on the atomically abrupt heterojunction (HJ) of Si/InAs axially heterostructured NWs. We studied the electromagnetic response of Si/InAs heterojunctions sensed by means of micro-Raman spectroscopy. These measurements reveal a high enhancement of the Si Raman signal when the incident laser beam is focused right on the Si/InAs interface. The experimental Raman observations are compared to simulations of finite element methods for the interaction of the focused laser beam with the heterostructured NW. The simulations explain why the enhancement is detected on the Si signal when illuminating the HJ and also provide a physical framework to understand the interaction between the incident EM field and the heterostructured NW. The understanding of this process opens the possibility of controlling the light absorption/scattering on semiconductor NWs with the use of heterostructures while taking advantage of the properties of both Si and III-V semiconductors. This is important not only for current NW based photonic nanodevices, such as light sensors, but also for the design of new optoelectronic devices based on NWs
    Palabras Clave
    Nanocables semiconductores (NW)
    Semiconductor nanowires (NWs)
    ISSN
    0021-8979
    Revisión por pares
    SI
    DOI
    10.1063/1.5058276
    Patrocinador
    Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. Project Nos. VA293U13 and VA081U16)
    Comisión Interministerial de Ciencia y Tecnología (Proyect CICYT MAT2010-20441-C02)
    Ministerio de Economía, Industria y Competitividad (Projects No. ENE 2014-56069-C4-4-R)
    Version del Editor
    https://aip.scitation.org/doi/10.1063/1.5058276
    Idioma
    eng
    URI
    http://uvadoc.uva.es/handle/10324/35098
    Derechos
    openAccess
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    • DEP32 - Artículos de revista [284]
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    Universidad de Valladolid

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