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dc.contributor.authorNavarro, A.
dc.contributor.authorMartínez Sacristán, Óscar 
dc.contributor.authorGaliana, Beatriz
dc.contributor.authorLombardero, I.
dc.contributor.authorOchoa, M.
dc.contributor.authorGarcía, I.
dc.contributor.authorGabás, M.
dc.contributor.authorBallesteros, Carmen
dc.contributor.authorJiménez López, Juan Ignacio 
dc.contributor.authorAlgora, C.
dc.date.accessioned2019-03-22T19:38:13Z
dc.date.available2019-03-22T19:38:13Z
dc.date.issued2017
dc.identifier.citation17th International Conference DRIP: Defects-Recognition, Imaging and Physics in Semiconductors, 8th to the 12th of October 2017, Valladolid, Spaines
dc.identifier.urihttp://uvadoc.uva.es/handle/10324/35207
dc.description.abstractThe development of a high quality 1eV material is one of the most import challenges in high efficiency solar cells development. The GaInP/GaInAs/1eV/Ge structure attained one of the highest solar cell efficiency, 44.0%. The dilute nitride GaNSbAs has attracted a considerable interest, since this alloy can be grown lattice-matched to GaAs with a bandgap of 1eV. However, It is well-known that N incorporation in dilute nitrides is associated with the generation of structural defects and as a result, the degradation of the optical properties. Thermal annealing is the most common procedure to improve the dilute nitrides response. In order to have a deeper understanding of the GaNSbAs layer behaviour, the effects of ex-situ annealing in N-atmosphere and in-situ annealing in As-atmosphere, have been investigated. Samples have been analysed for the first time by cathodoluminescence (CL), being this technique a good method for getting direct information in a simple, fast and non-destructive way about compositional gradients. It has been supported by scanning transmission electron microscopy (STEM) and energy dispersive spectroscopy (EDS).es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.titleCathodoluminescence characterization of the band gap energy in dilute nitride GaNSbAs alloys [Poster]es
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dc.relation.publisherversionhttp://drip17.org/home/es
dc.title.event17th Conference on Defects (DRIP XVII)es
dc.description.otherPóster
dc.description.projectMinisterio de Economía, Industria y Competitividad (Project ENE2014-56069-C4-4-R)es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International


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