dc.contributor.author | Navarro, A. | |
dc.contributor.author | Martínez Sacristán, Óscar | |
dc.contributor.author | Galiana, Beatriz | |
dc.contributor.author | Lombardero, I. | |
dc.contributor.author | Ochoa, M. | |
dc.contributor.author | García, I. | |
dc.contributor.author | Gabás, M. | |
dc.contributor.author | Ballesteros, Carmen | |
dc.contributor.author | Jiménez López, Juan Ignacio | |
dc.contributor.author | Algora, C. | |
dc.date.accessioned | 2019-03-22T19:38:13Z | |
dc.date.available | 2019-03-22T19:38:13Z | |
dc.date.issued | 2017 | |
dc.identifier.citation | 17th International Conference DRIP: Defects-Recognition, Imaging and Physics in Semiconductors, 8th to the 12th of October 2017, Valladolid, Spain | es |
dc.identifier.uri | http://uvadoc.uva.es/handle/10324/35207 | |
dc.description.abstract | The development of a high quality 1eV material is one of the most import challenges in high efficiency solar cells development. The GaInP/GaInAs/1eV/Ge structure attained one of the highest solar cell efficiency, 44.0%. The dilute nitride GaNSbAs has attracted a considerable interest, since this alloy can be grown lattice-matched to GaAs with a bandgap of 1eV. However, It is well-known that N incorporation in dilute nitrides is associated with the generation of structural defects and as a result, the degradation of the optical properties. Thermal annealing is the most common procedure to improve the dilute nitrides response. In order to have a deeper understanding of the GaNSbAs layer behaviour, the effects of ex-situ annealing in N-atmosphere and in-situ annealing in As-atmosphere, have been investigated. Samples have been analysed for the first time by cathodoluminescence (CL), being this technique a good method for getting direct information in a simple, fast and non-destructive way about compositional gradients. It has been supported by scanning transmission electron microscopy (STEM) and energy dispersive spectroscopy (EDS). | es |
dc.format.mimetype | application/pdf | es |
dc.language.iso | eng | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | |
dc.title | Cathodoluminescence characterization of the band gap energy in dilute nitride GaNSbAs alloys [Poster] | es |
dc.type | info:eu-repo/semantics/conferenceObject | es |
dc.relation.publisherversion | http://drip17.org/home/ | es |
dc.title.event | 17th Conference on Defects (DRIP XVII) | es |
dc.description.other | Póster | |
dc.description.project | Ministerio de Economía, Industria y Competitividad (Project ENE2014-56069-C4-4-R) | es |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 International |
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