Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/57892
Título
From ELF to compressibility in solids
Año del Documento
2015
Editorial
MDPI
Descripción
Producción Científica
Documento Fuente
International Journal of Molecular Sciences, 2015, vol. 16, n. 12, p. 8151-8167
Abstract
Understanding the electronic nature of materials’ compressibility has always been a major issue behind tabulation and rationalization of bulk moduli. This is especially because this understanding is one of the main approaches to the design and proposal of new materials with a desired (e.g., ultralow) compressibility. It is well recognized that the softest part of the solid will be the one responsible for its compression at the first place. In chemical terms, this means that the valence will suffer the main consequences of pressurization. It is desirable to understand this response to pressure in terms of the valence properties (charge, volume, etc.). One of the possible approaches is to consider models of electronic separability, such as the bond charge model (BCM), which provides insight into the cohesion of covalent crystals in analogy with the classical ionic model. However, this model relies on empirical parametrization of bond and lone pair properties. In this contribution, we have coupled electron localization function (ELF) ab initio data with the bond charge model developed by Parr in order to analyze solid state compressibility from first principles and moreover, to derive general trends and shed light upon superhard behavior.
Materias Unesco
22 Física
23 Química
Palabras Clave
ELF
Compressibility
Energy models
ISSN
1422-0067
Revisión por pares
SI
Patrocinador
The MALTA-Consolider Ingenio-2010 program under project CSD2007-00045
Ministerio de Educación (CTQ2009-14596-C02-02 and CTQ2012-38599-C02-02)
Ministerio de Educación (CTQ2009-14596-C02-02 and CTQ2012-38599-C02-02)
Version del Editor
Propietario de los Derechos
© 2015 The Author(s)
Idioma
eng
Tipo de versión
info:eu-repo/semantics/publishedVersion
Derechos
openAccess
Collections
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Except where otherwise noted, this item's license is described as Atribución 4.0 Internacional