Spin–orbit splitting of acceptor states in Si and C

Título

dc.contributor.author	Wysmolek, A
dc.contributor.author	Ruf, T
dc.contributor.author	Cardona, M
dc.contributor.author	Serrano Gutiérrez, Jorge
dc.date.accessioned	2024-01-30T14:10:44Z
dc.date.available	2024-01-30T14:10:44Z
dc.date.issued	1999
dc.identifier.citation	Physica B 273-641 (1999) 640-643	es
dc.identifier.issn	0921-4526	es
dc.identifier.uri	https://uvadoc.uva.es/handle/10324/65366
dc.description.abstract	We report calculations of the Γ8–Γ7 spin–orbit splittings of substitutional acceptor levels in silicon and diamond and corresponding Raman measurements for Si : X (X=B, Al, Ga, In). The calculations were performed using a Green's function method based on a full-zone 30×30 k.p Hamiltonian together with a Slater–Koster ansatz for the acceptor potential. The results are in reasonable agreement with experimental data.	es
dc.format.mimetype	application/pdf	es
dc.language.iso	eng	es
dc.publisher	Elsevier	es
dc.rights.accessRights	info:eu-repo/semantics/openAccess	es
dc.title	Spin–orbit splitting of acceptor states in Si and C	es
dc.type	info:eu-repo/semantics/article	es
dc.identifier.doi	10.1016/S0921-4526(99)00593-1	es
dc.identifier.publicationfirstpage	640	es
dc.identifier.publicationlastpage	643	es
dc.identifier.publicationtitle	Physica B: Condensed Matter	es
dc.identifier.publicationvolume	273-274	es
dc.peerreviewed	SI	es
dc.description.project	Spanish MEC	es
dc.description.project	Max Planck Gesellschaft	es
dc.type.hasVersion	info:eu-repo/semantics/publishedVersion	es