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Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors
dc.contributor.authorVaca Rodríguez, César 
dc.contributor.authorGonzalez, Mireia B.
dc.contributor.authorCastán Lanaspa, María Helena 
dc.contributor.authorGarcía García, Héctor 
dc.contributor.authorDuenas, Salvador
dc.contributor.authorCampabadal, Francesca
dc.contributor.authorMiranda, Enrique
dc.contributor.authorBailon, Luis A.
dc.date.accessioned2026-01-23T13:07:12Z
dc.date.available2026-01-23T13:07:12Z
dc.date.issued2016
dc.identifier.citationC. Vaca et al., "Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors," in IEEE Transactions on Electron Devices, vol. 63, no. 5, pp. 1877-1883, May 2016, doi: 10.1109/TED.2016.2546898es
dc.identifier.issn0018-9383es
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/82082
dc.descriptionProducción Científicaes
dc.description.abstractResistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current–voltage (I–V) curves show a maximum resistance, R0, at zero bias and a minimum value, R∞, at voltages close to reset, which indicates a departure from linearity. A three-parameter model for the I–V curves is reported and its temperature dependence analyzed.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.titleStudy From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitorses
dc.typeinfo:eu-repo/semantics/articlees
dc.identifier.doi10.1109/ted.2016.2546898es
dc.identifier.publicationfirstpage1877es
dc.identifier.publicationissue5es
dc.identifier.publicationlastpage1883es
dc.identifier.publicationtitleIEEE Transactions on Electron Deviceses
dc.identifier.publicationvolume63es
dc.peerreviewedSIes
dc.identifier.essn1557-9646es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones


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