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Experimental data of the paper: Nanoscale characterization of stress in Si nanowires for semiconductor qubit fabrication
dc.contributor.authorGonzález Guirado, Ginés
dc.contributor.authorPura Ruiz, Jose Luis 
dc.contributor.editorUniversidad de Valladolid, GdS-Optronlabes
dc.coverage.temporalstart=2025-02-27 ; 2025-12-19es
dc.date.accessioned2026-02-24T13:19:52Z
dc.date.available2026-02-24T13:19:52Z
dc.date.issued2026-02-24
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/83047
dc.description.abstractRaw data of the paper: Nanoscale characterization of stress in Si nanowires for semiconductor qubit fabrication. Subfolder Free-standing_SiNWs: contains the raw data of the measurements taken along the free-standing Si nanowires and the temperature calibration. Subfolder SiNWs_with_substrate: contains the raw data of the measurements taken along the Si nanowires with the substrate in the samples C4F2 and C4F10.es
dc.description.sponsorshipGdS-Optronlabes
dc.description.sponsorshipDepartemento de Física de la Materia Condensada, Cristalografía y Mineralogíaes
dc.format.mimetypeapplication/zipes
dc.language.isoenges
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/publicdomain/zero/1.0/*
dc.subject.classificationSilicon Nanowireses
dc.subject.classificationSemiconductor Qubitses
dc.subject.classificationMicro-Raman Spectroscopyes
dc.subject.classificationStress Engineeringes
dc.subject.classificationDry Etchinges
dc.subject.classificationSpin-Based qubitses
dc.titleExperimental data of the paper: Nanoscale characterization of stress in Si nanowires for semiconductor qubit fabricationes
dc.typedatasetes
dc.description.projectThe authors acknowledge the financial support from grant PID2021-126046OB-C22 funded by MICIU/AEI/10.13039/501100011033 and by “ERDF/EU”. Ginés acknowledges the financial support of Junta de Castilla y León through a predoctoral fellowshipes
dc.rightsCC0 1.0 Universal*
dc.type.hasVersioninfo:eu-repo/semantics/submittedVersiones


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