2026-04-30T00:38:51Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/217522025-03-26T19:45:07Zcom_10324_1158com_10324_931com_10324_894col_10324_1242

Bilousov, O. V. Carvajal, Joan Josep Geaney, H. Zubialevich, V. Parbrook, Peter Martínez Sacristán, Óscar Jiménez López, Juan Ignacio Díaz, Francesc Aguiló, Magdalena O'Dwyer, C. 2016-12-15T09:21:43Z 2016-12-15T09:21:43Z 2014 ACS Applied Materials & Interfaces 6, p. 17954-17964 (2014) 1944-8244 http://uvadoc.uva.es/handle/10324/21752 10.1021/am504786b Producción Científica Modern society is experiencing an ever-increasing demand for energy to power a vast array of electrical and mechanical devices. A significant amount of the energy consumed is used for lighting purposes. For instance, this demand is ~17% of the total energy consumed in the USA in 2011 [1]. Thus, any approach that can reduce energy consumption is important. In this context, the development of light emitting diodes (LEDs) incorporating at least one porous component, with improved light extraction efficiency, is being explored intensively [2]. However, up to now, only partially porous p-n junctions have been analyzed for this purpose. Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA166A11-2 and VA293U1) application/pdf eng American Chemical Society info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ Attribution-NonCommercial-NoDerivatives 4.0 International Chemical vapor deposition Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition info:eu-repo/semantics/article http://pubs.acs.org/journal/aamick SI