2026-04-14T19:33:08Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/217972025-02-13T07:16:11Zcom_10324_1158com_10324_931com_10324_894col_10324_1242

Anaya Calvo, Julián Torres, Alfredo Jiménez López, Juan Ignacio Rodríguez, Andrés Rodríguez, Tomás Ballesteros, Carmen 2016-12-16T10:03:44Z 2016-12-16T10:03:44Z 2014 MRS Proceedings, 2014, Volume 1659, p. 143-148 http://uvadoc.uva.es/handle/10324/21797 10.1557/opl.2014.197 The control of the SiGe NW composition is fundamental for the fabrication of high quality heterostructures. Raman spectroscopy has been used to analyse the composition of SiGe alloys. We present a study of the Raman spectrum of SiGe nanowires and SiGe/Si heterostructures. The inhomogeneity of the Ge composition deduced from the Raman spectrum is explained by the existence of a Ge-rich outer shell and by the interaction of the NW with the electromagnetic field associated with the laser beam. eng info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ Attribution-NonCommercial-NoDerivatives 4.0 International Raman Spectroscopy Raman Spectroscopy in Group IV Nanowires and Nanowire Axial Heterostructures info:eu-repo/semantics/article