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00925njm 22002777a 4500 dc Pelaz Montes, María Lourdes author Marqués Cuesta, Luis Alberto author Aboy Cebrián, María author López Martín, Pedro author Santos Tejido, Iván author 2017 We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs. Materials Science in Semiconductor Processing Volume 62, 2017, Pages 62-79 http://uvadoc.uva.es/handle/10324/28012 10.1016/j.mssp.2016.11.007 Improved physical models for advanced silicon device processing