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oai:uvadoc.uva.es:10324/280122025-03-26T19:10:04Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1270col_10324_28026
UVaDOC author Pelaz Montes, María Lourdes author Marqués Cuesta, Luis Alberto author Aboy Cebrián, María author López Martín, Pedro author Santos Tejido, Iván 2018-01-11T08:06:51Z 2018-01-11T08:06:51Z 2017 Materials Science in Semiconductor Processing Volume 62, 2017, Pages 62-79 http://uvadoc.uva.es/handle/10324/28012 10.1016/j.mssp.2016.11.007 We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs. eng Attribution-NonCommercial-NoDerivatives 4.0 International Improved physical models for advanced silicon device processing info:eu-repo/semantics/article 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URL https://uvadoc.uva.es/bitstream/10324/28012/1/Improved-physical-models-silicon.pdf File MD5 4543b4edad67dce1be2c7df95dd88b95 3753592 application/pdf Improved-physical-models-silicon.pdf