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oai:uvadoc.uva.es:10324/280142025-03-26T19:10:04Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1270col_10324_28026

Marqués Cuesta, Luis Alberto Santos Tejido, Iván Pelaz Montes, María Lourdes López Martín, Pedro Aboy Cebrián, María 2018-01-11T08:50:31Z 2018-01-11T08:50:31Z 2016 Materials Science in Semiconductor Processing Volume 42, Part 2, 2016, Pages 235-238 http://uvadoc.uva.es/handle/10324/28014 10.1016/j.mssp.2015.07.020 We have studied the early stages of self-interstitial clustering in silicon using molecular dynamics simulation techniques. We have generated silicon samples of over 200,000 atoms where we introduced a 0.5% extra concentration of self-interstitials. Then samples were annealed at several temperatures. During the simulations we observed the formation of interstitial clusters with different atomic structures, ranging from spherical and amorphous-like clusters, to highly ordered extended configurations such as (110) chains, {111} rod-like defects and dislocation loops, and {100} planar defects. This last type of defects, while common in germanium, have not been observed in silicon until very recently, in ultra-fast laser annealing experiments. The particular morphology of formed interstitial clusters is found to be related to the annealing temperature, as it is observed in the experiments. From the molecular dynamics simulations we have analyzed the atomic mechanisms leading to the formation and growth of interstitial clusters, with special attention to the newly found {100} planar defects eng info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ Attribution-NonCommercial-NoDerivatives 4.0 International Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon info:eu-repo/semantics/article