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oai:uvadoc.uva.es:10324/280152025-03-26T19:10:04Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1270col_10324_28026

00925njm 22002777a 4500 dc Marqués Cuesta, Luis Alberto author Santos Tejido, Iván author Pelaz Montes, María Lourdes author López Martín, Pedro author Aboy Cebrián, María author 2015 Requirements for the manufacturing of electronic devices at the nanometric scale are becoming more and more demanding on each new technology node, driving the need for the fabrication of ultra-shallow junctions and finFET structures. Main implantation strategies, cluster and cold implants, are aimed to reduce the amount of end-of-range defects through substrate amorphization. During finFET doping the device body gets amorphized, and its regrowth is more problematic than in the case of conventional planar devices. Consequently, there is a renewed interest on the modeling of amorphization and recrystallization in the front-end processing of Si. We present multi-scale simulation schemes to model amorphization and recrystallization in Si from an atomistic perspective. Models are able to correctly predict damage formation, accumulation and regrowth, both in the ballistic and thermal-spike regimes, in very good agreement with conventional molecular dynamics techniques but at a much lower computational cost. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 352, 2015, Pages 148-151 http://uvadoc.uva.es/handle/10324/28015 10.1016/j.nimb.2014.11.105 Atomistic modeling of ion implantation technologies in silicon