<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-04-27T21:52:04Z</responseDate><request verb="GetRecord" identifier="oai:uvadoc.uva.es:10324/28070" metadataPrefix="etdms">https://uvadoc.uva.es/oai/request</request><GetRecord><record><header><identifier>oai:uvadoc.uva.es:10324/28070</identifier><datestamp>2025-03-26T19:10:04Z</datestamp><setSpec>com_10324_1148</setSpec><setSpec>com_10324_931</setSpec><setSpec>com_10324_894</setSpec><setSpec>com_10324_28025</setSpec><setSpec>com_10324_954</setSpec><setSpec>col_10324_1270</setSpec><setSpec>col_10324_28026</setSpec></header><metadata><thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.0/" xmlns:doc="http://www.lyncode.com/xoai" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.0/ http://www.ndltd.org/standards/metadata/etdms/1.0/etdms.xsd">
<title>Ultrafast generation of unconventional {001} loops in Si</title>
<creator>Marqués Cuesta, Luis Alberto</creator>
<creator>Aboy Cebrián, María</creator>
<creator>Santos Tejido, Iván</creator>
<creator>López Martín, Pedro</creator>
<creator>Cristiano, Fuccio</creator>
<creator>La Magna, Antonino</creator>
<creator>Huet, Karim</creator>
<creator>Tabata, Toshiyuki</creator>
<creator>Pelaz Montes, María Lourdes</creator>
<description>Producción Científica</description>
<description>Ultra-fast laser annealing of ion implanted Si has led to thermodynamically unexpected large {001} self-interstitial loops, and the failure of Ostwald ripening models for describing self-interstitial cluster growth. We have carried out molecular dynamics simulations in combination with focused experiments in order to demonstrate that at temperatures close to the melting point, self-interstitial rich Si is driven into dense liquid-like droplets that are highly mobile within the solid crystalline Si matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {001} loops through a liquid-to-solid phase transition in the nanosecond timescale.</description>
<date>2018-01-16</date>
<date>2018-01-16</date>
<date>2017</date>
<type>info:eu-repo/semantics/article</type>
<identifier>Physical Review Letters Vol. 119, Iss. 20, 2017</identifier>
<identifier>0031-9007</identifier>
<identifier>http://uvadoc.uva.es/handle/10324/28070</identifier>
<identifier>10.1103/PhysRevLett.119.205503</identifier>
<language>eng</language>
<relation>https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.119.205503</relation>
<rights>info:eu-repo/semantics/openAccess</rights>
<rights>http://creativecommons.org/licenses/by-nc-nd/4.0/</rights>
<rights>Attribution-NonCommercial-NoDerivatives 4.0 International</rights>
<publisher>American Physical Society</publisher>
</thesis></metadata></record></GetRecord></OAI-PMH>