2026-04-14T17:29:54Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/280702025-03-26T19:10:04Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1270col_10324_28026

Marqués Cuesta, Luis Alberto Aboy Cebrián, María Santos Tejido, Iván López Martín, Pedro Cristiano, Fuccio La Magna, Antonino Huet, Karim Tabata, Toshiyuki Pelaz Montes, María Lourdes 2018-01-16T11:36:07Z 2018-01-16T11:36:07Z 2017 Physical Review Letters Vol. 119, Iss. 20, 2017 0031-9007 http://uvadoc.uva.es/handle/10324/28070 10.1103/PhysRevLett.119.205503 Ultra-fast laser annealing of ion implanted Si has led to thermodynamically unexpected large {001} self-interstitial loops, and the failure of Ostwald ripening models for describing self-interstitial cluster growth. We have carried out molecular dynamics simulations in combination with focused experiments in order to demonstrate that at temperatures close to the melting point, self-interstitial rich Si is driven into dense liquid-like droplets that are highly mobile within the solid crystalline Si matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {001} loops through a liquid-to-solid phase transition in the nanosecond timescale. eng info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ Attribution-NonCommercial-NoDerivatives 4.0 International Ultrafast generation of unconventional {001} loops in Si info:eu-repo/semantics/article