2026-04-28T19:35:46Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/286162025-03-26T19:10:04Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1270col_10324_28026

Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon Marqués Cuesta, Luis Alberto Aboy Cebrián, María Dudeck, Karleen J. Botton, Gianluigi A. Knights, Andrew P. Gwilliam, Russell M. Producción Científica We propose an atomistic model to describe extended {311} defects in silicon. It is based on the combination of interstitial and bond defect chains. The model is able to accurately reproduce not only planar {311} defects but also defect structures that show steps, bends, or both. We use molecular dynamics techniques to show that these interstitial and bond defect chains spontaneously transform into extended {311} defects. Simulations are validated by comparing with precise experimental measurements on actual {311} defects. The excellent agreement between the simulated and experimentally derived structures, regarding individual atomic positions and shape of the distinct structural {311} defect units, provides strong evidence for the robustness of the proposed model. 2018-02-20T11:40:01Z 2018-02-20T11:40:01Z 2014 info:eu-repo/semantics/article Journal of Applied Physics, 2014, 115, p. 143514 0021-8979 http://uvadoc.uva.es/handle/10324/28616 10.1063/1.4871538 eng http://aip.scitation.org/doi/full/10.1063/1.4871538 info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ Attribution-NonCommercial-NoDerivatives 4.0 International AIP Publishing SI