2026-04-28T12:25:22Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/309822025-03-26T19:10:03Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1270col_10324_28026

Santos Tejido, Iván Ruiz Prieto, Manuel Aboy Cebrián, María Marqués Cuesta, Luis Alberto López Martín, Pedro Pelaz Montes, María Lourdes 2018-07-27T08:50:00Z 2018-07-27T08:50:00Z 2018 Journal of Electronic Materials, 2018, Volume 47, Issue 9, pp 4955–4958 0361-5235 http://uvadoc.uva.es/handle/10324/30982 10.1007/s11664-018-6140-x We used atomistic simulation tools to correlate experimental transmission electron microscopy images of extended defects in crystalline silicon with their structures at an atomic level. Reliable atomic configurations of extended defects were generated using classical molecular dynamics simulations. Simulated high-resolution transmission electron microscopy (HRTEM) images of obtained defects were compared to experimental images reported in the literature. We validated the developed procedure with the configurations proposed in the literature for {113} and {111} rod-like defects. We also proposed from our procedure configurations for {111} and {001} dislocation loops with simulated HRTEM images in excellent agreement with experimental images. eng info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ Attribution-NonCommercial-NoDerivatives 4.0 International Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation info:eu-repo/semantics/article