2026-04-14T16:23:23Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/313182025-03-26T19:10:05Zcom_10324_1158com_10324_931com_10324_894col_10324_1242

Landesman, Jean-Pierre Cassidy, Daniel T. Fouchier, Marc Pargon, Erwine Levallois, Christophe Mokhtari, Merwan Jiménez López, Juan Ignacio Torres, Alfredo 2018-08-31T07:17:52Z 2018-08-31T07:17:52Z 2018 Optics Letters, Vol. 43, No. 15 http://uvadoc.uva.es/handle/10324/31318 10.1364/OL.43.003505 43 We investigated deformation of InP that was introduced by thin, narrow, dielectric SiNx stripes on the (100) surface of InP substrates. Quantitative optical measurements were performed using two different techniques based on luminescence from the InP: first, by degree of polarization of photoluminescence; and second, by cathodoluminescence spectroscopy. The two techniques provide complementary information on deformation of the InP and thus together provide a means to evaluate approaches to simulation of the deformation owing to dielectric stripes. Ultimately, these deformations can be used to estimate changes in refractive index and gain that are a result of the stripes eng info:eu-repo/semantics/openAccess Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces info:eu-repo/semantics/article