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<dc:title>Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces</dc:title>
<dc:creator>Landesman, Jean-Pierre</dc:creator>
<dc:creator>Cassidy, Daniel T.</dc:creator>
<dc:creator>Fouchier, Marc</dc:creator>
<dc:creator>Pargon, Erwine</dc:creator>
<dc:creator>Levallois, Christophe</dc:creator>
<dc:creator>Mokhtari, Merwan</dc:creator>
<dc:creator>Jiménez López, Juan Ignacio</dc:creator>
<dc:creator>Torres, Alfredo</dc:creator>
<dc:description>We investigated deformation of InP that was introduced by&#xd;
thin, narrow, dielectric SiNx stripes on the (100) surface of&#xd;
InP substrates. Quantitative optical measurements were&#xd;
performed using two different techniques based on luminescence&#xd;
from the InP: first, by degree of polarization of&#xd;
photoluminescence; and second, by cathodoluminescence spectroscopy. The two techniques provide complementary information on deformation of the InP and thus together provide a means to evaluate approaches to simulation of the deformation owing to dielectric stripes. Ultimately, these deformations can be used to estimate changes in refractive index and gain that are a result of the stripes</dc:description>
<dc:date>2018-08-31T07:17:52Z</dc:date>
<dc:date>2018-08-31T07:17:52Z</dc:date>
<dc:date>2018</dc:date>
<dc:type>info:eu-repo/semantics/article</dc:type>
<dc:identifier>Optics Letters, Vol. 43, No. 15</dc:identifier>
<dc:identifier>http://uvadoc.uva.es/handle/10324/31318</dc:identifier>
<dc:identifier>10.1364/OL.43.003505</dc:identifier>
<dc:identifier>43</dc:identifier>
<dc:language>eng</dc:language>
<dc:relation>https://www.osapublishing.org/ol/abstract.cfm?uri=ol-43-15-3505</dc:relation>
<dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
<dc:publisher>Optical Society of America</dc:publisher>
<dc:peerreviewed>SI</dc:peerreviewed>
</ow:Publication>
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