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oai:uvadoc.uva.es:10324/319632025-03-26T19:10:04Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1270col_10324_28026

Santos Tejido, Iván Pelaz Montes, María Lourdes Marqués Cuesta, Luis Alberto Colombo, Luciano 2011 Producción Científica We have analyzed the atomic rearrangements underlying self-diffusion in amorphous Si during annealing using tight-binding molecular dynamics simulations. Two types of amorphous samples with different structural features were used to analyze the influence of coordination defects. We have identified several types of atomic rearrangement mechanisms, and we have obtained an effective migration energy of around 1 eV. We found similar migration energies for both types of samples, but higher diffusivities in the one with a higher initial percentage of coordination defects. application/pdf http://uvadoc.uva.es/handle/10324/31963 eng American Physical Society Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing info:eu-repo/semantics/article TEXT UVaDOC. Repositorio Documental de la Universidad de Valladolid Hispana